Alignment of ferroelectric liquid crystal on surface SiO2 films on oblique ion beam deposition

A. Murauski*, Xihua Li, V. Chigrinov, A. Khokhlov, E. Khokhlov

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

Abstract

Investigation of alignment properties of SiO2 thin films produced by oblique ion beam deposition on substrate surface is presented. Suitable uniform alignment properties of the ferroelectric liquid crystals can be received on the alignment layer prepared by this method. Large deposition angle from 80° to 70 ° can be used for thin SiO2 layer deposition (from 10 to 20 nm). Linear design of the ion beam sputtering source gives a possibility to work with large size substrates.

Original languageEnglish
Pages75-77
Number of pages3
Publication statusPublished - 2006
Event13th International Display Workshops, IDW '06 - Otsu, Japan
Duration: 6 Dec 20066 Dec 2006

Conference

Conference13th International Display Workshops, IDW '06
Country/TerritoryJapan
CityOtsu
Period6/12/066/12/06

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