Abstract
Investigation of alignment properties of SiO2 thin films produced by oblique ion beam deposition on substrate surface is presented. Suitable uniform alignment properties of the ferroelectric liquid crystals can be received on the alignment layer prepared by this method. Large deposition angle from 80° to 70 ° can be used for thin SiO2 layer deposition (from 10 to 20 nm). Linear design of the ion beam sputtering source gives a possibility to work with large size substrates.
| Original language | English |
|---|---|
| Pages | 75-77 |
| Number of pages | 3 |
| Publication status | Published - 2006 |
| Event | 13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 6 Dec 2006 → 6 Dec 2006 |
Conference
| Conference | 13th International Display Workshops, IDW '06 |
|---|---|
| Country/Territory | Japan |
| City | Otsu |
| Period | 6/12/06 → 6/12/06 |