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ALTRAS-CNFET: Full-band based quantum transport simulator for carbon nanotube field effect transistor engineering: From chirality to device performance

  • Yadong Tao*
  • , Feng Liu
  • , Wei Bian
  • , Tsz Yin Man
  • , Mansun Chan
  • , Jin He
  • *Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/ReportConference Paper published in a bookpeer-review

Abstract

As one of the most promising alternative structures of silicon CMOS, Carbon Nanotube Field Effect Transistor (CNFET) has been paid lots of attention. The predicted dependences of band structure and device performance on chirality of Carbon Nanotube (CNT) and device structure have been studied in this paper by the means of a full-band based quantum transport simulator, ALTRAS-CNFET, developed by the group of Nano- & Tera- Devices and Circuits in Peking University. The results can be used to design and optimize the electrical characteristics of CNFET.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages53-56
Number of pages4
Publication statusPublished - 2007
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 20 May 200724 May 2007

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume1

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
Country/TerritoryUnited States
CitySanta Clara, CA
Period20/05/0724/05/07

Keywords

  • Band structure
  • Carbon Nanotube (CNT)
  • Carbon Nanotube Field Effect Transistor (CNFET)
  • Direct tunneling gate current
  • Quantum transport
  • Sub-threshold swing

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