Abstract
This letter presents an ultra low-power resistor-less bandgap reference circuit, which is based on the topology of a single-branch floating proportional-to-absolute-temperature (PTAT) voltage. By using a cascode high impedance current bias technique, the single-branch PTAT voltage can be directly floating on the complementary-to-absolute-temperature (CTAT) voltage generated by the VEB of the bipolar transistor. Ultra low power consumption is realized by the simple topology in the proposed method, which only needs a few current branches. Fabricated in 0.13-μm CMOS process, this letter generates a 1.252-V bandgap reference voltage. The total power consumption is 8.26 nW with a 1.4-V supply voltage. Without a resistor, this letter can achieve a small active area of 0.017 mm2. The average value of the temperature coefficient is 68 ppm/°C from -20 °C to 110 °C, and the line regulation is 0.019 %/V.
| Original language | English |
|---|---|
| Article number | 9129777 |
| Pages (from-to) | 74-77 |
| Number of pages | 4 |
| Journal | IEEE Solid-State Circuits Letters |
| Volume | 3 |
| DOIs | |
| Publication status | Published - 2020 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- Bandgap reference
- floating proportional-to-absolutetemperature (PTAT) voltage
- low-power
- nano-watt
- resistor-less