An accurate semi-empirical saturation drain current model for LDD N-MOSFET

Kai Chen; H. Clement Wann; Jon Duster; Dipankar Pramanik; Subhash Nariani; Ping K. Ko; C. Hu

doi:10.1109/55.485195

An accurate semi-empirical saturation drain current model for LDD N-MOSFET

Kai Chen^*, H. Clement Wann, Jon Duster, Dipankar Pramanik, Subhash Nariani, Ping K. Ko, C. Hu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

28 Citations (Scopus)

Abstract

Based on a new empirical mibility model which is solely dependent on V_gs, V_t and T_ox, a coresponding semiempirical I_dsat model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of I_dsat for the future generation of device scaling and low-power applications by using this new model is presented.

Original language	English
Pages (from-to)	145-147
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	3
DOIs	https://doi.org/10.1109/55.485195
Publication status	Published - Mar 1996
Externally published	Yes

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@article{c3e54c344530435aa68cc6e1251a1a42,

title = "An accurate semi-empirical saturation drain current model for LDD N-MOSFET",

abstract = "Based on a new empirical mibility model which is solely dependent on Vgs, Vt and Tox, a coresponding semiempirical Idsat model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of Idsat for the future generation of device scaling and low-power applications by using this new model is presented.",

author = "Kai Chen and Wann, \{H. Clement\} and Jon Duster and Dipankar Pramanik and Subhash Nariani and Ko, \{Ping K.\} and C. Hu",

year = "1996",

month = mar,

doi = "10.1109/55.485195",

language = "English",

volume = "17",

pages = "145--147",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - An accurate semi-empirical saturation drain current model for LDD N-MOSFET

AU - Chen, Kai

AU - Wann, H. Clement

AU - Duster, Jon

AU - Pramanik, Dipankar

AU - Nariani, Subhash

AU - Ko, Ping K.

AU - Hu, C.

PY - 1996/3

Y1 - 1996/3

N2 - Based on a new empirical mibility model which is solely dependent on Vgs, Vt and Tox, a coresponding semiempirical Idsat model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of Idsat for the future generation of device scaling and low-power applications by using this new model is presented.

AB - Based on a new empirical mibility model which is solely dependent on Vgs, Vt and Tox, a coresponding semiempirical Idsat model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of Idsat for the future generation of device scaling and low-power applications by using this new model is presented.

UR - https://www.scopus.com/pages/publications/0030108265

U2 - 10.1109/55.485195

DO - 10.1109/55.485195

M3 - Journal Article

AN - SCOPUS:0030108265

SN - 0741-3106

VL - 17

SP - 145

EP - 147

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

An accurate semi-empirical saturation drain current model for LDD N-MOSFET

Abstract

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