TY - GEN
T1 - An advanced surface-potential-plus MOSFET model
AU - He, Jin
AU - Xi, Xuemei
AU - Chan, Mansun
AU - Niknejad, Ali
AU - Hu, Chenming
PY - 2003
Y1 - 2003
N2 - Like other surface-potential based model, our surface-potential-plus model starts with charge-sheet approximation, uses the quasi-Fermi-potential to integrate drift and diffusion current and formulates an inversion charge equation that can be analytically solved for given terminal voltage. This eliminates the need for precise computation of the surface potential. Based on the inversion charge solution, a continuous, symmetric and accurate MOS model is developed. Various small dimensional effects including polysilicon depletion, quantum mechanical effects, velocity overshoot, source-side injection limit effect, and quasi ballistic transport of nano-scale MOSFETs are integrated naturally into this model. Comparison with measured data validates the new model. The modeling framework is easily extendable to SOI and double-gate MOSFETs.
AB - Like other surface-potential based model, our surface-potential-plus model starts with charge-sheet approximation, uses the quasi-Fermi-potential to integrate drift and diffusion current and formulates an inversion charge equation that can be analytically solved for given terminal voltage. This eliminates the need for precise computation of the surface potential. Based on the inversion charge solution, a continuous, symmetric and accurate MOS model is developed. Various small dimensional effects including polysilicon depletion, quantum mechanical effects, velocity overshoot, source-side injection limit effect, and quasi ballistic transport of nano-scale MOSFETs are integrated naturally into this model. Comparison with measured data validates the new model. The modeling framework is easily extendable to SOI and double-gate MOSFETs.
KW - Compact modeling
KW - Mosfets
KW - Small dimensional effects
KW - Surface-potential-plus model
UR - https://www.scopus.com/pages/publications/2942691922
M3 - Conference Paper published in a book
AN - SCOPUS:2942691922
SN - 0972842209
SN - 9780972842204
T3 - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003
SP - 262
EP - 265
BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003
A2 - Laudon, M.
A2 - Romanowicz, B.
T2 - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Y2 - 23 February 2003 through 27 February 2003
ER -