An enhanced BSIM3 NQS model for large signal transient simulation

Wai Kit Lee; Mansun Chan; Ping K. Ko

An enhanced BSIM3 NQS model for large signal transient simulation

Wai Kit Lee^*, Mansun Chan, Ping K. Ko

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behaviors like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has made with result obtained from 2-D device simulator. The time penalty for using the new enhancement is about 17% more than the original model. The accuracy as well as the limitations of the model will also be discussed.

Original language	English
Pages	415-418
Number of pages	4
Publication status	Published - 1999
Event	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore Duration: 8 Sept 1999 → 10 Sept 1999

Conference

Conference	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
Country/Territory	Singapore
City	Singapore
Period	8/09/99 → 10/09/99

Cite this

@conference{4f1dd0fbf6ac403f8d1a78d957a91f5b,

title = "An enhanced BSIM3 NQS model for large signal transient simulation",

abstract = "An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behaviors like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has made with result obtained from 2-D device simulator. The time penalty for using the new enhancement is about 17\% more than the original model. The accuracy as well as the limitations of the model will also be discussed.",

author = "Lee, \{Wai Kit\} and Mansun Chan and Ko, \{Ping K.\}",

year = "1999",

language = "English",

pages = "415--418",

note = "8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 ; Conference date: 08-09-1999 Through 10-09-1999",

}

TY - CONF

T1 - An enhanced BSIM3 NQS model for large signal transient simulation

AU - Lee, Wai Kit

AU - Chan, Mansun

AU - Ko, Ping K.

PY - 1999

Y1 - 1999

N2 - An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behaviors like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has made with result obtained from 2-D device simulator. The time penalty for using the new enhancement is about 17% more than the original model. The accuracy as well as the limitations of the model will also be discussed.

AB - An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behaviors like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has made with result obtained from 2-D device simulator. The time penalty for using the new enhancement is about 17% more than the original model. The accuracy as well as the limitations of the model will also be discussed.

UR - https://www.scopus.com/pages/publications/1842627561

M3 - Conference Paper

AN - SCOPUS:1842627561

SP - 415

EP - 418

T2 - 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99

Y2 - 8 September 1999 through 10 September 1999

ER -

An enhanced BSIM3 NQS model for large signal transient simulation

Abstract

Conference

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