Analysis of a MOS integrated gas sensor using a surface chemistry based model

Roy C.C. Li*, Philip C.H. Chan, Peter W. Cheung

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

11 Citations (Scopus)

Abstract

To facilitate gas sensor design with the associated signal-conditioning circuitry, a previously developed gas adsorption model is implemented in the popular circuit simulation program SPICE. The model is based on the gas adsorption theory. With the adsorption model implemented in SPICE, the performance of a MOSFET gas sensor integrated with the associated circuitry can be studied. The analysis was applied to three sensors, namely, the H2 sensor, the NH3 sensor and the CO sensor. A noise analysis of the sensors was also performed and their lower bounds of detectivity determined. A chopper-stabilized circuit was applied to the sensing circuitry. Simulation results show that noise in gas sensors can be reduced.

Original languageEnglish
Pages (from-to)233-242
Number of pages10
JournalSensors and Actuators, B: Chemical
Volume28
Issue number3
Publication statusPublished - Oct 1995

Keywords

  • Gas adsorption model
  • MOSFET sensors
  • Noise analysis

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