TY - JOUR
T1 - ANALYTICAL MODEL FOR INTRINSIC CAPACITANCES OF SHORT-CHANNEL MOSFETS.
AU - Sheu, Bing J.
AU - Ko, Ping K.
PY - 1984
Y1 - 1984
N2 - The characteristics of the intrinsic capacitances of short-channel MOSFETs are described and an analytical model to explain them is presented. The inclusion of the mobility degradation effect, velocity saturation effect, bias-dependent fringing-field effect, and source/drain series resistance effect is found to be adequate for accurate prediction of the intrinsic capacitances. The model contains simple equations which can be implemented in a computer for fast computations.
AB - The characteristics of the intrinsic capacitances of short-channel MOSFETs are described and an analytical model to explain them is presented. The inclusion of the mobility degradation effect, velocity saturation effect, bias-dependent fringing-field effect, and source/drain series resistance effect is found to be adequate for accurate prediction of the intrinsic capacitances. The model contains simple equations which can be implemented in a computer for fast computations.
UR - https://www.scopus.com/pages/publications/0021640218
U2 - 10.1109/iedm.1984.190707
DO - 10.1109/iedm.1984.190707
M3 - Conference article published in journal
AN - SCOPUS:0021640218
SN - 0163-1918
SP - 300
EP - 303
JO - Technical Digest - International Electron Devices Meeting, IEDM
JF - Technical Digest - International Electron Devices Meeting, IEDM
ER -