Antisite defects of Bi2Te3 thin films

Sunglae Cho; Yunki Kim; Antonio DiVenere; George K. Wong; John B. Ketterson; Jerry R. Meyer

doi:10.1063/1.124707

Antisite defects of Bi₂Te₃ thin films

Sunglae Cho, Yunki Kim, Antonio DiVenere, George K. Wong, John B. Ketterson, Jerry R. Meyer

Department of Physics

Research output: Contribution to journal › Journal Article › peer-review

154 Citations (Scopus)

Abstract

Bi₂Te₃ thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi₂Te₃ grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.

Original language	English
Pages (from-to)	1401-1403
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	10
DOIs	https://doi.org/10.1063/1.124707
Publication status	Published - 6 Sept 1999

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10.1063/1.124707

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title = "Antisite defects of Bi2Te3 thin films",

abstract = "Bi2Te3 thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi2Te3 grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.",

author = "Sunglae Cho and Yunki Kim and Antonio DiVenere and Wong, \{George K.\} and Ketterson, \{John B.\} and Meyer, \{Jerry R.\}",

year = "1999",

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T1 - Antisite defects of Bi2Te3 thin films

AU - Cho, Sunglae

AU - Kim, Yunki

AU - DiVenere, Antonio

AU - Wong, George K.

AU - Ketterson, John B.

AU - Meyer, Jerry R.

PY - 1999/9/6

Y1 - 1999/9/6

N2 - Bi2Te3 thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi2Te3 grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.

AB - Bi2Te3 thin films were grown on CdTe(111)B substrates using molecular beam epitaxy. On CdTe(111), Bi2Te3 grows along the (00.l) axis of the hexagonal cell in a layer-by-layer growth mode. The most stoichiometric sample has high crystallinity, high thermopower and high electron mobility. Both the crystallinity and the transport properties are sensitive to deviations from stoichiometry. The c-axis lattice constant, thermopower, and electron mobility decrease with excess Te, and the crystallinity clearly degrades.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000082231800020

UR - https://www.scopus.com/pages/publications/0032620898

U2 - 10.1063/1.124707

DO - 10.1063/1.124707

M3 - Journal Article

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SN - 0003-6951

VL - 75

SP - 1401

EP - 1403

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Antisite defects of Bi₂Te₃ thin films

Abstract

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