Artificially-engineered InGaN-based digital alloy for optoelectronics

Wei Sun; Chee Keong Tan; Nelson Tansu

doi:10.1109/IPCon.2015.7323675

Artificially-engineered InGaN-based digital alloy for optoelectronics

Wei Sun, Chee Keong Tan, Nelson Tansu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

An artificially-engineered InGaN-based digital alloy is investigated based on GaN/InN superlattice, and the findings indicate the capability of this material system to achieve tunable bandgap and absorption properties for optoelectronic applications.

Original language	English
Title of host publication	2015 IEEE Photonics Conference, IPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	519-520
Number of pages	2
ISBN (Electronic)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323675
Publication status	Published - 9 Nov 2015
Externally published	Yes
Event	IEEE Photonics Conference, IPC 2015 - Reston, United States Duration: 30 Aug 2015 → 31 Aug 2015

Publication series

Name	2015 IEEE Photonics Conference, IPC 2015

Conference

Conference	IEEE Photonics Conference, IPC 2015
Country/Territory	United States
City	Reston
Period	30/08/15 → 31/08/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

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10.1109/IPCon.2015.7323675

Cite this

@inproceedings{888a11660e65464c9eef3ffb034f0a09,

title = "Artificially-engineered InGaN-based digital alloy for optoelectronics",

abstract = "An artificially-engineered InGaN-based digital alloy is investigated based on GaN/InN superlattice, and the findings indicate the capability of this material system to achieve tunable bandgap and absorption properties for optoelectronic applications.",

author = "Wei Sun and Tan, \{Chee Keong\} and Nelson Tansu",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Photonics Conference, IPC 2015 ; Conference date: 30-08-2015 Through 31-08-2015",

year = "2015",

month = nov,

day = "9",

doi = "10.1109/IPCon.2015.7323675",

language = "English",

series = "2015 IEEE Photonics Conference, IPC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "519--520",

booktitle = "2015 IEEE Photonics Conference, IPC 2015",

}

Sun, W, Tan, CK & Tansu, N 2015, Artificially-engineered InGaN-based digital alloy for optoelectronics. in 2015 IEEE Photonics Conference, IPC 2015., 7323675, 2015 IEEE Photonics Conference, IPC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 519-520, IEEE Photonics Conference, IPC 2015, Reston, United States, 30/08/15. https://doi.org/10.1109/IPCon.2015.7323675

Artificially-engineered InGaN-based digital alloy for optoelectronics. / Sun, Wei; Tan, Chee Keong; Tansu, Nelson.
2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 519-520 7323675 (2015 IEEE Photonics Conference, IPC 2015).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Artificially-engineered InGaN-based digital alloy for optoelectronics

AU - Sun, Wei

AU - Tan, Chee Keong

AU - Tansu, Nelson

PY - 2015/11/9

Y1 - 2015/11/9

N2 - An artificially-engineered InGaN-based digital alloy is investigated based on GaN/InN superlattice, and the findings indicate the capability of this material system to achieve tunable bandgap and absorption properties for optoelectronic applications.

AB - An artificially-engineered InGaN-based digital alloy is investigated based on GaN/InN superlattice, and the findings indicate the capability of this material system to achieve tunable bandgap and absorption properties for optoelectronic applications.

UR - https://www.scopus.com/pages/publications/84964898378

U2 - 10.1109/IPCon.2015.7323675

DO - 10.1109/IPCon.2015.7323675

M3 - Conference Paper published in a book

AN - SCOPUS:84964898378

T3 - 2015 IEEE Photonics Conference, IPC 2015

SP - 519

EP - 520

BT - 2015 IEEE Photonics Conference, IPC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Photonics Conference, IPC 2015

Y2 - 30 August 2015 through 31 August 2015

ER -

Artificially-engineered InGaN-based digital alloy for optoelectronics

Abstract

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