As-deposited Y-Ba-Cu-O superconducting films on silicon at 400°C

S. Witanachchi*, S. Patel, H. S. Kwok, D. T. Shaw

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

80 Citations (Scopus)

Abstract

Y-Ba-Cu-O thin films have been grown on silicon at a substrate temperature of 400°C by plasma-assisted laser deposition technique. These films were superconducting in an as-deposited state. Films deposited directly on silicon and films with a MgO buffer layer differed in their superconducting properties. Films with a MgO layer showed higher critical temperatures (70 K) and higher critical currents (3×103 A/cm2 at 31 K) than films deposited directly on Si. Depth profiling by Auger and x-ray photoelectron spectroscopy has been employed to study the diffusion and structural variation near the interface.

Original languageEnglish
Pages (from-to)578-580
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number6
DOIs
Publication statusPublished - 1989
Externally publishedYes

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