Atomic disorder scattering in emerging transistors by parameter-free first principle modeling

Qing Shi; Lining Zhang; Yu Zhu; Lei Liu; Mansun Chan; Hong Guo

doi:10.1109/IEDM.2014.7047144

Atomic disorder scattering in emerging transistors by parameter-free first principle modeling

Qing Shi^*, Lining Zhang, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

A parameter-free first principle modeling methodology is reported with emphasis on simulating effects of atomistic disorder in nano-scale transistors. The technique is based on the developed theory of nonequilibrium coherent potential approximation and a linear scaling sparse Hamiltonian implementation. Using this technique, effects of disorder scattering to the quantum transport properties of a boron-nitrogen (B-N) co-doped graphene tunnel field effect transistor (TFET) is investigated.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	30.6.1-30.6.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047144
Publication status	Published - 20 Feb 2015
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 15 Dec 2014 → 17 Dec 2014

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Conference

Conference	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	15/12/14 → 17/12/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

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10.1109/IEDM.2014.7047144

Cite this

Shi, Q., Zhang, L., Zhu, Y., Liu, L., Chan, M., & Guo, H. (2015). Atomic disorder scattering in emerging transistors by parameter-free first principle modeling. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 30.6.1-30.6.4). Article 7047144 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047144

Shi, Qing ; Zhang, Lining ; Zhu, Yu et al. / Atomic disorder scattering in emerging transistors by parameter-free first principle modeling. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 30.6.1-30.6.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

@inproceedings{605fb837e71a49eea643494b92d25365,

title = "Atomic disorder scattering in emerging transistors by parameter-free first principle modeling",

abstract = "A parameter-free first principle modeling methodology is reported with emphasis on simulating effects of atomistic disorder in nano-scale transistors. The technique is based on the developed theory of nonequilibrium coherent potential approximation and a linear scaling sparse Hamiltonian implementation. Using this technique, effects of disorder scattering to the quantum transport properties of a boron-nitrogen (B-N) co-doped graphene tunnel field effect transistor (TFET) is investigated.",

author = "Qing Shi and Lining Zhang and Yu Zhu and Lei Liu and Mansun Chan and Hong Guo",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

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doi = "10.1109/IEDM.2014.7047144",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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Shi, Q, Zhang, L, Zhu, Y, Liu, L, Chan, M & Guo, H 2015, Atomic disorder scattering in emerging transistors by parameter-free first principle modeling. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047144, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 30.6.1-30.6.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 15/12/14. https://doi.org/10.1109/IEDM.2014.7047144

Atomic disorder scattering in emerging transistors by parameter-free first principle modeling. / Shi, Qing; Zhang, Lining; Zhu, Yu et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 30.6.1-30.6.4 7047144 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Atomic disorder scattering in emerging transistors by parameter-free first principle modeling

AU - Shi, Qing

AU - Zhang, Lining

AU - Zhu, Yu

AU - Liu, Lei

AU - Chan, Mansun

AU - Guo, Hong

PY - 2015/2/20

Y1 - 2015/2/20

N2 - A parameter-free first principle modeling methodology is reported with emphasis on simulating effects of atomistic disorder in nano-scale transistors. The technique is based on the developed theory of nonequilibrium coherent potential approximation and a linear scaling sparse Hamiltonian implementation. Using this technique, effects of disorder scattering to the quantum transport properties of a boron-nitrogen (B-N) co-doped graphene tunnel field effect transistor (TFET) is investigated.

AB - A parameter-free first principle modeling methodology is reported with emphasis on simulating effects of atomistic disorder in nano-scale transistors. The technique is based on the developed theory of nonequilibrium coherent potential approximation and a linear scaling sparse Hamiltonian implementation. Using this technique, effects of disorder scattering to the quantum transport properties of a boron-nitrogen (B-N) co-doped graphene tunnel field effect transistor (TFET) is investigated.

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UR - https://www.scopus.com/pages/publications/84938218369

U2 - 10.1109/IEDM.2014.7047144

DO - 10.1109/IEDM.2014.7047144

M3 - Conference Paper published in a book

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 30.6.1-30.6.4

BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

Shi Q, Zhang L, Zhu Y, Liu L, Chan M, Guo H. Atomic disorder scattering in emerging transistors by parameter-free first principle modeling. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 30.6.1-30.6.4. 7047144. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047144

Atomic disorder scattering in emerging transistors by parameter-free first principle modeling

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