Binary alignment pattern induced by single step exposure of laser beam polarization interference

Li Tan; Jacob Y. Ho; Hoi Sing Kwok

doi:10.1002/j.2168-0159.2012.tb05770.x

Binary alignment pattern induced by single step exposure of laser beam polarization interference

Li Tan, Jacob Y. Ho, Hoi Sing Kwok

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Conference article published in journal › peer-review

3 Citations (Scopus)

Abstract

A new method of making binary alignment pattern through a single step exposure without using mask is proposed. This binary pattern is induced by polarization interference of laser beams at alignment surface. The line width is controlled by crossing angle between two input beams, which could be very small. Using azo-dye as alignment material, which tends to align their long axis perpendicular to the activate light polarization direction, we obtain a binary pattern of 3μm in pitch with laser beam crossing half angle at 3.48^o.

Original language	English
Pages (from-to)	286-288
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	43
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb05770.x
Publication status	Published - 2012
Event	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 3 Jun 2012 → 8 Jun 2012

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Publisher Copyright:
© 2012 SID.

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10.1002/j.2168-0159.2012.tb05770.x

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title = "Binary alignment pattern induced by single step exposure of laser beam polarization interference",

abstract = "A new method of making binary alignment pattern through a single step exposure without using mask is proposed. This binary pattern is induced by polarization interference of laser beams at alignment surface. The line width is controlled by crossing angle between two input beams, which could be very small. Using azo-dye as alignment material, which tends to align their long axis perpendicular to the activate light polarization direction, we obtain a binary pattern of 3μm in pitch with laser beam crossing half angle at 3.48o.",

author = "Li Tan and Ho, \{Jacob Y.\} and Kwok, \{Hoi Sing\}",

note = "Publisher Copyright: {\textcopyright} 2012 SID.; 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

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doi = "10.1002/j.2168-0159.2012.tb05770.x",

language = "English",

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T1 - Binary alignment pattern induced by single step exposure of laser beam polarization interference

AU - Tan, Li

AU - Ho, Jacob Y.

AU - Kwok, Hoi Sing

PY - 2012

Y1 - 2012

N2 - A new method of making binary alignment pattern through a single step exposure without using mask is proposed. This binary pattern is induced by polarization interference of laser beams at alignment surface. The line width is controlled by crossing angle between two input beams, which could be very small. Using azo-dye as alignment material, which tends to align their long axis perpendicular to the activate light polarization direction, we obtain a binary pattern of 3μm in pitch with laser beam crossing half angle at 3.48o.

AB - A new method of making binary alignment pattern through a single step exposure without using mask is proposed. This binary pattern is induced by polarization interference of laser beams at alignment surface. The line width is controlled by crossing angle between two input beams, which could be very small. Using azo-dye as alignment material, which tends to align their long axis perpendicular to the activate light polarization direction, we obtain a binary pattern of 3μm in pitch with laser beam crossing half angle at 3.48o.

UR - https://openalex.org/W2002937888

UR - https://www.scopus.com/pages/publications/85044193453

U2 - 10.1002/j.2168-0159.2012.tb05770.x

DO - 10.1002/j.2168-0159.2012.tb05770.x

M3 - Conference article published in journal

SN - 0097-966X

VL - 43

SP - 286

EP - 288

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Binary alignment pattern induced by single step exposure of laser beam polarization interference

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