Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact

Hongtao Cui; Xiaolei Liu; Fangyang Liu; Xiaojing Hao; Ning Song; Chang Yan

Boosting Cu₂ZnSnS₄ solar cells efficiency by a thin Ag intermediate layer between absorber and back contact

Hongtao Cui^*, Xiaolei Liu, Fangyang Liu, Xiaojing Hao, Ning Song, Chang Yan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this work, 20 nm Ag is deposited on Mo coated soda lime glass prior to Cu₂ZnSnS₄ absorber deposition to improve the back contact and therefore enhance solar cell efficiency. This thin coating is found to inhibit the formation of SnS₂, MoS₂, and other defects especially voids at the back contact; therefore, reduces the series resistance and recombination leading to substantially higher short circuit current density (J_SC), fill factor, open circuit voltage (V_OC), and efficiency in comparison to the controlled non-coating Mo, though the former results in lower material crystallinity.

Original language	English
Article number	041115
Journal	Applied Physics Letters
Volume	104
Issue number	4
Publication status	Published - 27 Jan 2014
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 AIP Publishing LLC.

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://hdl.handle.net/1783.1/122304

Cite this

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title = "Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact",

abstract = "In this work, 20 nm Ag is deposited on Mo coated soda lime glass prior to Cu2ZnSnS4 absorber deposition to improve the back contact and therefore enhance solar cell efficiency. This thin coating is found to inhibit the formation of SnS2, MoS2, and other defects especially voids at the back contact; therefore, reduces the series resistance and recombination leading to substantially higher short circuit current density (JSC), fill factor, open circuit voltage (VOC), and efficiency in comparison to the controlled non-coating Mo, though the former results in lower material crystallinity.",

author = "Hongtao Cui and Xiaolei Liu and Fangyang Liu and Xiaojing Hao and Ning Song and Chang Yan",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = jan,

day = "27",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Boosting Cu2ZnSnS4 solar cells efficiency by a thin Ag intermediate layer between absorber and back contact

AU - Cui, Hongtao

AU - Liu, Xiaolei

AU - Liu, Fangyang

AU - Hao, Xiaojing

AU - Song, Ning

AU - Yan, Chang

PY - 2014/1/27

Y1 - 2014/1/27

N2 - In this work, 20 nm Ag is deposited on Mo coated soda lime glass prior to Cu2ZnSnS4 absorber deposition to improve the back contact and therefore enhance solar cell efficiency. This thin coating is found to inhibit the formation of SnS2, MoS2, and other defects especially voids at the back contact; therefore, reduces the series resistance and recombination leading to substantially higher short circuit current density (JSC), fill factor, open circuit voltage (VOC), and efficiency in comparison to the controlled non-coating Mo, though the former results in lower material crystallinity.

AB - In this work, 20 nm Ag is deposited on Mo coated soda lime glass prior to Cu2ZnSnS4 absorber deposition to improve the back contact and therefore enhance solar cell efficiency. This thin coating is found to inhibit the formation of SnS2, MoS2, and other defects especially voids at the back contact; therefore, reduces the series resistance and recombination leading to substantially higher short circuit current density (JSC), fill factor, open circuit voltage (VOC), and efficiency in comparison to the controlled non-coating Mo, though the former results in lower material crystallinity.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000331209900015

UR - https://openalex.org/W2075539112

M3 - Journal Article

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041115

ER -