TY - JOUR
T1 - Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors
AU - Zhou, Wei
AU - Meng, Zhiguo
AU - Zhao, Shuyun
AU - Zhang, Meng
AU - Chen, Rongsheng
AU - Wong, Man
AU - Kwok, Hoi Sing
PY - 2012
Y1 - 2012
N2 - Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.
AB - Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.
KW - Bridged grain (BG)
KW - polycrystalline silicon (poly-Si)
KW - thin-film transistors (TFTs)
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000309364600027
UR - https://openalex.org/W2091789254
UR - https://www.scopus.com/pages/publications/84866925940
U2 - 10.1109/LED.2012.2210019
DO - 10.1109/LED.2012.2210019
M3 - Journal Article
SN - 0741-3106
VL - 33
SP - 1414
EP - 1416
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
M1 - 6290340
ER -