Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors

Wei Zhou; Zhiguo Meng; Shuyun Zhao; Meng Zhang; Rongsheng Chen; Man Wong; Hoi Sing Kwok

doi:10.1109/LED.2012.2210019

Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors

Wei Zhou^*
, Zhiguo Meng
, Shuyun Zhao
, Meng Zhang
, Rongsheng Chen
, Man Wong
, Hoi Sing Kwok

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

47 Citations (Scopus)

Abstract

Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.

Original language	English
Article number	6290340
Pages (from-to)	1414-1416
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	10
DOIs	https://doi.org/10.1109/LED.2012.2210019
Publication status	Published - 2012

Keywords

Bridged grain (BG)
polycrystalline silicon (poly-Si)
thin-film transistors (TFTs)

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10.1109/LED.2012.2210019

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title = "Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors",

abstract = "Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.",

keywords = "Bridged grain (BG), polycrystalline silicon (poly-Si), thin-film transistors (TFTs)",

author = "Wei Zhou and Zhiguo Meng and Shuyun Zhao and Meng Zhang and Rongsheng Chen and Man Wong and Kwok, \{Hoi Sing\}",

year = "2012",

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language = "English",

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T1 - Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors

AU - Zhou, Wei

AU - Meng, Zhiguo

AU - Zhao, Shuyun

AU - Zhang, Meng

AU - Chen, Rongsheng

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2012

Y1 - 2012

N2 - Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.

AB - Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.

KW - Bridged grain (BG)

KW - polycrystalline silicon (poly-Si)

KW - thin-film transistors (TFTs)

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000309364600027

UR - https://openalex.org/W2091789254

U2 - 10.1109/LED.2012.2210019

DO - 10.1109/LED.2012.2210019

M3 - Journal Article

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EP - 1416

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 6290340

ER -

Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors

Abstract

Keywords

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