Abstract
Electroluminescent (EL) devices were fabricated using Poly(N-vinylcarbazole) (PVK) doped with two high fluorescence blue dyes, 1,1,4,4-Tetraphenyl-1,3-butadiene (TPB) and 2,5-Bis(5-tert-buty 1-2-benzoxazoly) thiophene (BBOT) as an emitting layer, a layer of tris(8-quinolinolato aluminum (III) (Alq 3) as an electron-transporting layer, and aluminum as the electron-injecting top electrode contact. The cell structure of glass substrate/ITO/doped PVK/Alq 3/Al was employed. In this cell structure, electron and hole are injected from the aluminum electrode and positive polarity, respectively. Then transport into emitting layer and recombinate concomitant electroluminescence from the doped PVK layer. The EL device has a relatively low turn-on voltage of 4 V dc bias, and a luminance of 1200 cd/m 2 were achieved at a drive voltage of 10 V. The blue emission peaking at about 455 nm and 475 nm.
| Original language | English |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Manfred Eich, Bruce H. Chai, Minhua Jiang |
| Pages | 191-193 |
| Number of pages | 3 |
| Volume | 2897 |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications - Beijing, China Duration: 6 Nov 1996 → 7 Nov 1996 |
Conference
| Conference | Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications |
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| City | Beijing, China |
| Period | 6/11/96 → 7/11/96 |