Building hybrid active pixels for CMOS imager on SOI substrate

Weiquan Zhang; Mansun Chan; Hongmei Wang; P. K. Ko

doi:10.1109/SOI.1999.819873

Building hybrid active pixels for CMOS imager on SOI substrate

Weiquan Zhang, Mansun Chan, Hongmei Wang, P. K. Ko

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

There are many kinds of electronic imaging products in consumer market and military systems such as the camcorders, digital still cameras, and star tracking systems. CMOS active pixel sensors (AF'S) takes the advantages of the mature CMOS manufacturing technology and has been competing with the currently dominating chargexoupled devices (CCD) technology in the state-of-the-art imaging applications that require low power, high integration and complex functionality. SO1 technology, on the other hand, has been proven to be advantageous in many applications compared with the conventional bulk technology. In particular, its radiation hardness has long been recognized in space and military applications. As a result, image sensors built on SO1 will find many useful applications. However, to integrate image sensors on SO1 substrate suffers from low quantum efficiency. Due to the limited depth of silicon available on the top film, most of the photons can pass through the sensing regions without being absorbed. This limitation inhabits the development of SO1 imaging systems. To overcome the barrier, CMOS compatible devices with self-amplification have been reported (Zhang et al. 1998; Yamamoto et al. 1996). However, the use of the high gain properties required a stable process and an accurate model for predicting the output, which are both not yet available. In this paper, we have investigated the performance of a hybrid active pixel structure. In this approach, the photo-diode is built on the bottom substrate, while the reset transistor and the in-pixel-amplifying transistor are hnilt on the top silicon film. The performance of the AF'S is expected to be similar to the bulk technology with potentially higher speed due to the lower capacitance that the photodiode. has to drive in SO1 technology. However, as a minimal deviation from conventional SO1 CMOS process is used to fabricate the APS, the photo-diode is less optimized than the current bulk technology. The operation of the APS in different configurations under different light intensity has been studied and reported.

Original language	English
Title of host publication	1999 IEEE International SOI Conference, SOI 1999 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	102-103
Number of pages	2
ISBN (Print)	0780354567, 9780780354562
DOIs	https://doi.org/10.1109/SOI.1999.819873
Publication status	Published - 1999
Event	25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999 - Rohnert Park, United States Duration: 4 Oct 1999 → 7 Oct 1999

Publication series

Name	1999 IEEE International SOI Conference, SOI 1999 - Proceedings

Conference

Conference	25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999
Country/Territory	United States
City	Rohnert Park
Period	4/10/99 → 7/10/99

Bibliographical note

Publisher Copyright:
© 1999 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Access to Document

10.1109/SOI.1999.819873

Cite this

Zhang, W., Chan, M., Wang, H., & Ko, P. K. (1999). Building hybrid active pixels for CMOS imager on SOI substrate. In 1999 IEEE International SOI Conference, SOI 1999 - Proceedings (pp. 102-103). Article 819873 (1999 IEEE International SOI Conference, SOI 1999 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.1999.819873

@inproceedings{316e10b02d244b13bf2e1c98beb1de0e,

title = "Building hybrid active pixels for CMOS imager on SOI substrate",

abstract = "There are many kinds of electronic imaging products in consumer market and military systems such as the camcorders, digital still cameras, and star tracking systems. CMOS active pixel sensors (AF'S) takes the advantages of the mature CMOS manufacturing technology and has been competing with the currently dominating chargexoupled devices (CCD) technology in the state-of-the-art imaging applications that require low power, high integration and complex functionality. SO1 technology, on the other hand, has been proven to be advantageous in many applications compared with the conventional bulk technology. In particular, its radiation hardness has long been recognized in space and military applications. As a result, image sensors built on SO1 will find many useful applications. However, to integrate image sensors on SO1 substrate suffers from low quantum efficiency. Due to the limited depth of silicon available on the top film, most of the photons can pass through the sensing regions without being absorbed. This limitation inhabits the development of SO1 imaging systems. To overcome the barrier, CMOS compatible devices with self-amplification have been reported (Zhang et al. 1998; Yamamoto et al. 1996). However, the use of the high gain properties required a stable process and an accurate model for predicting the output, which are both not yet available. In this paper, we have investigated the performance of a hybrid active pixel structure. In this approach, the photo-diode is built on the bottom substrate, while the reset transistor and the in-pixel-amplifying transistor are hnilt on the top silicon film. The performance of the AF'S is expected to be similar to the bulk technology with potentially higher speed due to the lower capacitance that the photodiode. has to drive in SO1 technology. However, as a minimal deviation from conventional SO1 CMOS process is used to fabricate the APS, the photo-diode is less optimized than the current bulk technology. The operation of the APS in different configurations under different light intensity has been studied and reported.",

author = "Weiquan Zhang and Mansun Chan and Hongmei Wang and Ko, \{P. K.\}",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999 ; Conference date: 04-10-1999 Through 07-10-1999",

year = "1999",

doi = "10.1109/SOI.1999.819873",

language = "English",

isbn = "0780354567",

series = "1999 IEEE International SOI Conference, SOI 1999 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "102--103",

booktitle = "1999 IEEE International SOI Conference, SOI 1999 - Proceedings",

}

Zhang, W, Chan, M, Wang, H & Ko, PK 1999, Building hybrid active pixels for CMOS imager on SOI substrate. in 1999 IEEE International SOI Conference, SOI 1999 - Proceedings., 819873, 1999 IEEE International SOI Conference, SOI 1999 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 102-103, 25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999, Rohnert Park, United States, 4/10/99. https://doi.org/10.1109/SOI.1999.819873

Building hybrid active pixels for CMOS imager on SOI substrate. / Zhang, Weiquan; Chan, Mansun; Wang, Hongmei et al.
1999 IEEE International SOI Conference, SOI 1999 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 1999. p. 102-103 819873 (1999 IEEE International SOI Conference, SOI 1999 - Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Building hybrid active pixels for CMOS imager on SOI substrate

AU - Zhang, Weiquan

AU - Chan, Mansun

AU - Wang, Hongmei

AU - Ko, P. K.

PY - 1999

Y1 - 1999

N2 - There are many kinds of electronic imaging products in consumer market and military systems such as the camcorders, digital still cameras, and star tracking systems. CMOS active pixel sensors (AF'S) takes the advantages of the mature CMOS manufacturing technology and has been competing with the currently dominating chargexoupled devices (CCD) technology in the state-of-the-art imaging applications that require low power, high integration and complex functionality. SO1 technology, on the other hand, has been proven to be advantageous in many applications compared with the conventional bulk technology. In particular, its radiation hardness has long been recognized in space and military applications. As a result, image sensors built on SO1 will find many useful applications. However, to integrate image sensors on SO1 substrate suffers from low quantum efficiency. Due to the limited depth of silicon available on the top film, most of the photons can pass through the sensing regions without being absorbed. This limitation inhabits the development of SO1 imaging systems. To overcome the barrier, CMOS compatible devices with self-amplification have been reported (Zhang et al. 1998; Yamamoto et al. 1996). However, the use of the high gain properties required a stable process and an accurate model for predicting the output, which are both not yet available. In this paper, we have investigated the performance of a hybrid active pixel structure. In this approach, the photo-diode is built on the bottom substrate, while the reset transistor and the in-pixel-amplifying transistor are hnilt on the top silicon film. The performance of the AF'S is expected to be similar to the bulk technology with potentially higher speed due to the lower capacitance that the photodiode. has to drive in SO1 technology. However, as a minimal deviation from conventional SO1 CMOS process is used to fabricate the APS, the photo-diode is less optimized than the current bulk technology. The operation of the APS in different configurations under different light intensity has been studied and reported.

AB - There are many kinds of electronic imaging products in consumer market and military systems such as the camcorders, digital still cameras, and star tracking systems. CMOS active pixel sensors (AF'S) takes the advantages of the mature CMOS manufacturing technology and has been competing with the currently dominating chargexoupled devices (CCD) technology in the state-of-the-art imaging applications that require low power, high integration and complex functionality. SO1 technology, on the other hand, has been proven to be advantageous in many applications compared with the conventional bulk technology. In particular, its radiation hardness has long been recognized in space and military applications. As a result, image sensors built on SO1 will find many useful applications. However, to integrate image sensors on SO1 substrate suffers from low quantum efficiency. Due to the limited depth of silicon available on the top film, most of the photons can pass through the sensing regions without being absorbed. This limitation inhabits the development of SO1 imaging systems. To overcome the barrier, CMOS compatible devices with self-amplification have been reported (Zhang et al. 1998; Yamamoto et al. 1996). However, the use of the high gain properties required a stable process and an accurate model for predicting the output, which are both not yet available. In this paper, we have investigated the performance of a hybrid active pixel structure. In this approach, the photo-diode is built on the bottom substrate, while the reset transistor and the in-pixel-amplifying transistor are hnilt on the top silicon film. The performance of the AF'S is expected to be similar to the bulk technology with potentially higher speed due to the lower capacitance that the photodiode. has to drive in SO1 technology. However, as a minimal deviation from conventional SO1 CMOS process is used to fabricate the APS, the photo-diode is less optimized than the current bulk technology. The operation of the APS in different configurations under different light intensity has been studied and reported.

UR - https://openalex.org/W2490037434

UR - https://www.scopus.com/pages/publications/85054358768

U2 - 10.1109/SOI.1999.819873

DO - 10.1109/SOI.1999.819873

M3 - Conference Paper published in a book

SN - 0780354567

SN - 9780780354562

T3 - 1999 IEEE International SOI Conference, SOI 1999 - Proceedings

SP - 102

EP - 103

BT - 1999 IEEE International SOI Conference, SOI 1999 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999

Y2 - 4 October 1999 through 7 October 1999

ER -

Building hybrid active pixels for CMOS imager on SOI substrate

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

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