TY - JOUR
T1 - Bulk heterojunction photovoltaic cells with low donor concentration
AU - Zhang, Minlu
AU - Wang, Hui
AU - Tian, Hongkun
AU - Geng, Yanhou
AU - Tang, Ching W.
PY - 2011/11/9
Y1 - 2011/11/9
N2 - High-efficiency organic photovoltaic (OPV) cells are mostly based on a bulk heterojunction [1] (BHJ) structure, which is essentially a thin film of mixed electron donor and acceptor. With few exceptions, the acceptor component is a fullerene-based material such as C 60 [2] and PCBM, [3] whereas a large variety of materials has been found to be useful as the donor component. [4] In order to achieve high power conversion efficiency, the donor-acceptor composition of the BHJ needs to be optimized with respect to light absorption and charge generation, including for instance the use of a low bandgap donor, [5] to complement the absorption of the acceptor and selecting a donor with proper highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels to match that of the acceptor. In this work, we show that it is possible to achieve a large open-circuit voltage ( V oc > 1.0 V) in a fullerene-based OPV with almost any donor, provided that the donor is present in a small concentration and that MoO x is used as the Schottky barrier contact [6] to the BHJ. With fine tuning of the donor concentration to overcome the hole-transport limitation in the BHJ, high power conversion efficiency (η PCE > 5%) has been realized.
AB - High-efficiency organic photovoltaic (OPV) cells are mostly based on a bulk heterojunction [1] (BHJ) structure, which is essentially a thin film of mixed electron donor and acceptor. With few exceptions, the acceptor component is a fullerene-based material such as C 60 [2] and PCBM, [3] whereas a large variety of materials has been found to be useful as the donor component. [4] In order to achieve high power conversion efficiency, the donor-acceptor composition of the BHJ needs to be optimized with respect to light absorption and charge generation, including for instance the use of a low bandgap donor, [5] to complement the absorption of the acceptor and selecting a donor with proper highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels to match that of the acceptor. In this work, we show that it is possible to achieve a large open-circuit voltage ( V oc > 1.0 V) in a fullerene-based OPV with almost any donor, provided that the donor is present in a small concentration and that MoO x is used as the Schottky barrier contact [6] to the BHJ. With fine tuning of the donor concentration to overcome the hole-transport limitation in the BHJ, high power conversion efficiency (η PCE > 5%) has been realized.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000297042000023
UR - https://openalex.org/W1982730974
U2 - 10.1002/adma.201102173
DO - 10.1002/adma.201102173
M3 - Journal Article
SN - 0935-9648
VL - 23
SP - 4960
EP - 4964
JO - Advanced Materials
JF - Advanced Materials
IS - 42
ER -