CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance

Lawrence D. Jackel; Robert G. Swartz; Richard E. Howard; Ping Keung Ko; Paul Grabbe

doi:10.1109/T-ED.1984.21783

CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance

Lawrence D. Jackel
, Robert G. Swartz
, Richard E. Howard
, Ping Keung Ko
, Paul Grabbe

Research output: Contribution to journal › Journal Article › peer-review

6 Citations (Scopus)

Abstract

A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.

Original language	English
Pages (from-to)	1752-1758
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/T-ED.1984.21783
Publication status	Published - Dec 1984
Externally published	Yes

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10.1109/T-ED.1984.21783

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title = "CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance",

abstract = "A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.",

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year = "1984",

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T2 - A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance

AU - Jackel, Lawrence D.

AU - Swartz, Robert G.

AU - Howard, Richard E.

AU - Ko, Ping Keung

AU - Grabbe, Paul

PY - 1984/12

Y1 - 1984/12

N2 - A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.

AB - A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.

UR - https://openalex.org/W1997152148

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1984TV47100013

UR - https://www.scopus.com/pages/publications/0347597631

U2 - 10.1109/T-ED.1984.21783

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EP - 1758

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

CASFET: A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance

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