TY - JOUR
T1 - CASFET
T2 - A MOSFET-JFET Cascode Device with Ultralow Gate Capacitance
AU - Jackel, Lawrence D.
AU - Swartz, Robert G.
AU - Howard, Richard E.
AU - Ko, Ping Keung
AU - Grabbe, Paul
PY - 1984/12
Y1 - 1984/12
N2 - A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.
AB - A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration, The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1984TV47100013
UR - https://www.scopus.com/pages/publications/0347597631
U2 - 10.1109/T-ED.1984.21783
DO - 10.1109/T-ED.1984.21783
M3 - Journal Article
AN - SCOPUS:0347597631
SN - 0018-9383
VL - 31
SP - 1752
EP - 1758
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
ER -