Changing the properties of indium tin oxide by introducing aluminum cations

M. P. Kuz'min; Xiao Yuan Li; M. Y. Kuz'mina; A. I. Begunov; A. S. Zhuravlyova

doi:10.1016/j.elecom.2016.03.009

Changing the properties of indium tin oxide by introducing aluminum cations

M. P. Kuz'min^*, Xiao Yuan Li, M. Y. Kuz'mina, A. I. Begunov, A. S. Zhuravlyova

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

The properties of the semiconductor material indium tin oxide (ITO) have been studied. A technique allowing the properties of ITO to be changed by introducing aluminum cations into the structure during cyclic voltammetry has been developed. Changes in transparency, conductivity, and band gap were measured during the course of the experiment. It was shown that these ITO properties can be significantly improved by changes in chemical composition.

Original language	English
Pages (from-to)	35-38
Number of pages	4
Journal	Electrochemistry Communications
Volume	67
DOIs	https://doi.org/10.1016/j.elecom.2016.03.009
Publication status	Published - 1 Jun 2016

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.

Keywords

Aluminum
ITO
Optical materials and properties
Semiconductors
Thin films

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10.1016/j.elecom.2016.03.009

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title = "Changing the properties of indium tin oxide by introducing aluminum cations",

abstract = "The properties of the semiconductor material indium tin oxide (ITO) have been studied. A technique allowing the properties of ITO to be changed by introducing aluminum cations into the structure during cyclic voltammetry has been developed. Changes in transparency, conductivity, and band gap were measured during the course of the experiment. It was shown that these ITO properties can be significantly improved by changes in chemical composition.",

keywords = "Aluminum, ITO, Optical materials and properties, Semiconductors, Thin films",

author = "Kuz'min, \{M. P.\} and Li, \{Xiao Yuan\} and Kuz'mina, \{M. Y.\} and Begunov, \{A. I.\} and Zhuravlyova, \{A. S.\}",

year = "2016",

month = jun,

day = "1",

doi = "10.1016/j.elecom.2016.03.009",

language = "English",

volume = "67",

pages = "35--38",

journal = "Electrochemistry Communications",

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TY - JOUR

T1 - Changing the properties of indium tin oxide by introducing aluminum cations

AU - Kuz'min, M. P.

AU - Li, Xiao Yuan

AU - Kuz'mina, M. Y.

AU - Begunov, A. I.

AU - Zhuravlyova, A. S.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - The properties of the semiconductor material indium tin oxide (ITO) have been studied. A technique allowing the properties of ITO to be changed by introducing aluminum cations into the structure during cyclic voltammetry has been developed. Changes in transparency, conductivity, and band gap were measured during the course of the experiment. It was shown that these ITO properties can be significantly improved by changes in chemical composition.

AB - The properties of the semiconductor material indium tin oxide (ITO) have been studied. A technique allowing the properties of ITO to be changed by introducing aluminum cations into the structure during cyclic voltammetry has been developed. Changes in transparency, conductivity, and band gap were measured during the course of the experiment. It was shown that these ITO properties can be significantly improved by changes in chemical composition.

KW - Aluminum

KW - ITO

KW - Optical materials and properties

KW - Semiconductors

KW - Thin films

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000376700700008

UR - https://openalex.org/W2310900491

UR - https://www.scopus.com/pages/publications/84962110348

U2 - 10.1016/j.elecom.2016.03.009

DO - 10.1016/j.elecom.2016.03.009

M3 - Journal Article

SN - 1388-2481

VL - 67

SP - 35

EP - 38

JO - Electrochemistry Communications

JF - Electrochemistry Communications

ER -

Changing the properties of indium tin oxide by introducing aluminum cations

Abstract

Bibliographical note

Keywords

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