Characteristics of double-gate a-IGZO TFT

Xin He; Xiang Xiao; Wei Deng; Longyan Wang; Ling Wang; Shipeng Chi; Yang Shao; Mansun Chan; Shengdong Zhang

doi:10.1109/ICSICT.2014.7021269

Characteristics of double-gate a-IGZO TFT

Xin He, Xiang Xiao, Wei Deng, Longyan Wang, Ling Wang, Shipeng Chi, Yang Shao, Mansun Chan, Shengdong Zhang

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

6 Citations (Scopus)

Abstract

A double-gate (DG) a-IGZO TFT with separate bottom-gate and top-gate is fabricated and electrically characterized. It is shown that the double-gate device has a steeper sub-threshold swing, a larger carrier mobility, and a driving current 2.4 times larger than the conventional single-gate device. Due to the lowered vertical electric field across the channel region, a negligible V_th shift is observed for the double-gate device under negative gate bias stress. Moreover, the dynamic threshold voltage effect has also been demonstrated due to the separate two gates in the TFT.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021269
Publication status	Published - 23 Jan 2014
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Access to Document

10.1109/ICSICT.2014.7021269

Cite this

He, X., Xiao, X., Deng, W., Wang, L., Wang, L., Chi, S., Shao, Y., Chan, M., & Zhang, S. (2014). Characteristics of double-gate a-IGZO TFT. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021269 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021269

He, Xin ; Xiao, Xiang ; Deng, Wei et al. / Characteristics of double-gate a-IGZO TFT. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{e4bba040d7d34238bb65997e221b1ff1,

title = "Characteristics of double-gate a-IGZO TFT",

abstract = "A double-gate (DG) a-IGZO TFT with separate bottom-gate and top-gate is fabricated and electrically characterized. It is shown that the double-gate device has a steeper sub-threshold swing, a larger carrier mobility, and a driving current 2.4 times larger than the conventional single-gate device. Due to the lowered vertical electric field across the channel region, a negligible Vth shift is observed for the double-gate device under negative gate bias stress. Moreover, the dynamic threshold voltage effect has also been demonstrated due to the separate two gates in the TFT.",

author = "Xin He and Xiang Xiao and Wei Deng and Longyan Wang and Ling Wang and Shipeng Chi and Yang Shao and Mansun Chan and Shengdong Zhang",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021269",

language = "English",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

}

He, X, Xiao, X, Deng, W, Wang, L, Wang, L, Chi, S, Shao, Y, Chan, M & Zhang, S 2014, Characteristics of double-gate a-IGZO TFT. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021269, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021269

Characteristics of double-gate a-IGZO TFT. / He, Xin; Xiao, Xiang; Deng, Wei et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021269 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Characteristics of double-gate a-IGZO TFT

AU - He, Xin

AU - Xiao, Xiang

AU - Deng, Wei

AU - Wang, Longyan

AU - Wang, Ling

AU - Chi, Shipeng

AU - Shao, Yang

AU - Chan, Mansun

AU - Zhang, Shengdong

PY - 2014/1/23

Y1 - 2014/1/23

N2 - A double-gate (DG) a-IGZO TFT with separate bottom-gate and top-gate is fabricated and electrically characterized. It is shown that the double-gate device has a steeper sub-threshold swing, a larger carrier mobility, and a driving current 2.4 times larger than the conventional single-gate device. Due to the lowered vertical electric field across the channel region, a negligible Vth shift is observed for the double-gate device under negative gate bias stress. Moreover, the dynamic threshold voltage effect has also been demonstrated due to the separate two gates in the TFT.

AB - A double-gate (DG) a-IGZO TFT with separate bottom-gate and top-gate is fabricated and electrically characterized. It is shown that the double-gate device has a steeper sub-threshold swing, a larger carrier mobility, and a driving current 2.4 times larger than the conventional single-gate device. Due to the lowered vertical electric field across the channel region, a negligible Vth shift is observed for the double-gate device under negative gate bias stress. Moreover, the dynamic threshold voltage effect has also been demonstrated due to the separate two gates in the TFT.

UR - https://openalex.org/W2038226856

UR - https://www.scopus.com/pages/publications/84946687718

U2 - 10.1109/ICSICT.2014.7021269

DO - 10.1109/ICSICT.2014.7021269

M3 - Conference Paper published in a book

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

He X, Xiao X, Deng W, Wang L, Wang L, Chi S et al. Characteristics of double-gate a-IGZO TFT. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021269. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021269

Characteristics of double-gate a-IGZO TFT

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this