Characteristics of high quality hafnium oxide gate dielectric

N. Zhan; K. L. Ng; M. C. Poon; C. W. Kok; M. Chan; H. Wong

doi:10.1109/HKEDM.2002.1029153

Characteristics of high quality hafnium oxide gate dielectric

N. Zhan, K. L. Ng, M. C. Poon, C. W. Kok, M. Chan, H. Wong

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

Hafnium oxide (HfO₂) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO₂ as dielectric was fabricated and studied. The HfO₂ film was formed by direct sputtering of Hf in O₂ and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO₂ and the Si substrate was affected by the RTA time within the 500°C to 600°C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.

Original language	English
Title of host publication	Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	43-46
Number of pages	4
ISBN (Electronic)	0780374290
DOIs	https://doi.org/10.1109/HKEDM.2002.1029153
Publication status	Published - 2002
Event	9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong, China Duration: 22 Jun 2002 → …

Publication series

Name	Proceedings of the IEEE Hong Kong Electron Devices Meeting
Volume	2002-January

Conference

Conference	9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
Country/Territory	China
City	Hong Kong
Period	22/06/02 → …

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

Keywords

Bonding
Capacitors
Chemicals
Dielectric substrates
Hafnium oxide
High K dielectric materials
Leakage current
Rapid thermal annealing
Sputtering
Temperature

Access to Document

10.1109/HKEDM.2002.1029153

Cite this

Zhan, N., Ng, K. L., Poon, M. C., Kok, C. W., Chan, M., & Wong, H. (2002). Characteristics of high quality hafnium oxide gate dielectric. In Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 (pp. 43-46). Article 1029153 (Proceedings of the IEEE Hong Kong Electron Devices Meeting; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/HKEDM.2002.1029153

@inproceedings{fa63e93f03f24cd1a9b282eb5ed02cde,

title = "Characteristics of high quality hafnium oxide gate dielectric",

abstract = "Hafnium oxide (HfO2) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO2 as dielectric was fabricated and studied. The HfO2 film was formed by direct sputtering of Hf in O2 and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO2 and the Si substrate was affected by the RTA time within the 500°C to 600°C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.",

keywords = "Bonding, Capacitors, Chemicals, Dielectric substrates, Hafnium oxide, High K dielectric materials, Leakage current, Rapid thermal annealing, Sputtering, Temperature",

author = "N. Zhan and Ng, \{K. L.\} and Poon, \{M. C.\} and Kok, \{C. W.\} and M. Chan and H. Wong",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 ; Conference date: 22-06-2002",

year = "2002",

doi = "10.1109/HKEDM.2002.1029153",

language = "English",

series = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "43--46",

booktitle = "Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002",

}

Zhan, N, Ng, KL, Poon, MC, Kok, CW, Chan, M & Wong, H 2002, Characteristics of high quality hafnium oxide gate dielectric. in Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002., 1029153, Proceedings of the IEEE Hong Kong Electron Devices Meeting, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 43-46, 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002, Hong Kong, China, 22/06/02. https://doi.org/10.1109/HKEDM.2002.1029153

Characteristics of high quality hafnium oxide gate dielectric. / Zhan, N.; Ng, K. L.; Poon, M. C. et al.
Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 43-46 1029153 (Proceedings of the IEEE Hong Kong Electron Devices Meeting; Vol. 2002-January).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Characteristics of high quality hafnium oxide gate dielectric

AU - Zhan, N.

AU - Ng, K. L.

AU - Poon, M. C.

AU - Kok, C. W.

AU - Chan, M.

AU - Wong, H.

PY - 2002

Y1 - 2002

N2 - Hafnium oxide (HfO2) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO2 as dielectric was fabricated and studied. The HfO2 film was formed by direct sputtering of Hf in O2 and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO2 and the Si substrate was affected by the RTA time within the 500°C to 600°C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.

AB - Hafnium oxide (HfO2) was investigated as an alternative possible gate dielectric. A MOS capacitor using HfO2 as dielectric was fabricated and studied. The HfO2 film was formed by direct sputtering of Hf in O2 and Ar ambient on to a Si substrate and post-sputtering rapid thermal annealing (RTA). XPS results showed that the interface layer formed between the HfO2 and the Si substrate was affected by the RTA time within the 500°C to 600°C annealing temperature. The interface layer was mainly composed of hafnium silicate and had high interface trap density. Increase in RTA time was found to lower the effective barrier height of the layer and the FN tunneling current.

KW - Bonding

KW - Capacitors

KW - Chemicals

KW - Dielectric substrates

KW - Hafnium oxide

KW - High K dielectric materials

KW - Leakage current

KW - Rapid thermal annealing

KW - Sputtering

KW - Temperature

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UR - https://openalex.org/W2108108614

UR - https://www.scopus.com/pages/publications/84948761776

U2 - 10.1109/HKEDM.2002.1029153

DO - 10.1109/HKEDM.2002.1029153

M3 - Conference Paper published in a book

T3 - Proceedings of the IEEE Hong Kong Electron Devices Meeting

SP - 43

EP - 46

BT - Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002

Y2 - 22 June 2002

ER -

Characteristics of high quality hafnium oxide gate dielectric

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