CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.

M. S. Liang; J. Y. Choi; P. K. Ko; C. Hu

CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.

M. S. Liang^*, J. Y. Choi, P. K. Ko, C. Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

11 Citations (Scopus)

Abstract

Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 angstrom have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs, including subthreshold swings, channel mobilities, and linear transconductances, have been examined. A simple model based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.

Original language	English
Pages (from-to)	153-157
Number of pages	5
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1984
Externally published	Yes

Cite this

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title = "CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.",

abstract = "Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 angstrom have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs, including subthreshold swings, channel mobilities, and linear transconductances, have been examined. A simple model based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.",

author = "Liang, \{M. S.\} and Choi, \{J. Y.\} and Ko, \{P. K.\} and C. Hu",

year = "1984",

language = "English",

pages = "153--157",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.

AU - Liang, M. S.

AU - Choi, J. Y.

AU - Ko, P. K.

AU - Hu, C.

PY - 1984

Y1 - 1984

N2 - Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 angstrom have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs, including subthreshold swings, channel mobilities, and linear transconductances, have been examined. A simple model based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.

AB - Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 angstrom have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs, including subthreshold swings, channel mobilities, and linear transconductances, have been examined. A simple model based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.

UR - https://www.scopus.com/pages/publications/0021640172

M3 - Conference article published in journal

AN - SCOPUS:0021640172

SN - 0163-1918

SP - 153

EP - 157

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

ER -

CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.

Abstract

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