Charge collection ion microscopy: Imaging of defects in semiconductors with a positive ion microbeam

David Angell*, B. B. Marsh, N. Cue, Jing-Wei Miao Jing-Wei

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

27 Citations (Scopus)

Abstract

The new technique of Charge Collection Ion Microscopy (CCIM) for investigating defects in semiconductors is described. It utilizes the SUNY/Albany ion microbeam and is based on the collection efficiency of electron-hole (e-h) pairs produced by individual ions penetrating the sample. Compared to the technique of electron beam induced conductivity (EBIC), CCIM produces more damage per projectile but has the compensating advantage that more e-h pairs are created. Analysis of individual pulses rather than an average current therefore is necessary and practicable. Illustrative results are presented for Schottky diodes which have been locally damaged by ion bombardment.

Original languageEnglish
Pages (from-to)172-178
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume44
Issue number2
DOIs
Publication statusPublished - Dec 1989
Externally publishedYes

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