Charge collection ion microscopy: Imaging of defects in semiconductors with a positive ion microbeam

David Angell; B. B. Marsh; N. Cue; Jing-Wei Miao Jing-Wei

doi:10.1016/0168-583X(89)90424-2

Charge collection ion microscopy: Imaging of defects in semiconductors with a positive ion microbeam

David Angell^*
, B. B. Marsh
, N. Cue
, Jing-Wei Miao Jing-Wei

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

27 Citations (Scopus)

Abstract

The new technique of Charge Collection Ion Microscopy (CCIM) for investigating defects in semiconductors is described. It utilizes the SUNY/Albany ion microbeam and is based on the collection efficiency of electron-hole (e-h) pairs produced by individual ions penetrating the sample. Compared to the technique of electron beam induced conductivity (EBIC), CCIM produces more damage per projectile but has the compensating advantage that more e-h pairs are created. Analysis of individual pulses rather than an average current therefore is necessary and practicable. Illustrative results are presented for Schottky diodes which have been locally damaged by ion bombardment.

Original language	English
Pages (from-to)	172-178
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	44
Issue number	2
DOIs	https://doi.org/10.1016/0168-583X(89)90424-2
Publication status	Published - Dec 1989
Externally published	Yes

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10.1016/0168-583X(89)90424-2

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title = "Charge collection ion microscopy: Imaging of defects in semiconductors with a positive ion microbeam",

abstract = "The new technique of Charge Collection Ion Microscopy (CCIM) for investigating defects in semiconductors is described. It utilizes the SUNY/Albany ion microbeam and is based on the collection efficiency of electron-hole (e-h) pairs produced by individual ions penetrating the sample. Compared to the technique of electron beam induced conductivity (EBIC), CCIM produces more damage per projectile but has the compensating advantage that more e-h pairs are created. Analysis of individual pulses rather than an average current therefore is necessary and practicable. Illustrative results are presented for Schottky diodes which have been locally damaged by ion bombardment.",

author = "David Angell and Marsh, \{B. B.\} and N. Cue and \{Miao Jing-Wei\}, Jing-Wei",

year = "1989",

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doi = "10.1016/0168-583X(89)90424-2",

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volume = "44",

pages = "172--178",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

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}

Charge collection ion microscopy: Imaging of defects in semiconductors with a positive ion microbeam. / Angell, David; Marsh, B. B.; Cue, N. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 44, No. 2, 12.1989, p. 172-178.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Charge collection ion microscopy

T2 - Imaging of defects in semiconductors with a positive ion microbeam

AU - Angell, David

AU - Marsh, B. B.

AU - Cue, N.

AU - Miao Jing-Wei, Jing-Wei

PY - 1989/12

Y1 - 1989/12

N2 - The new technique of Charge Collection Ion Microscopy (CCIM) for investigating defects in semiconductors is described. It utilizes the SUNY/Albany ion microbeam and is based on the collection efficiency of electron-hole (e-h) pairs produced by individual ions penetrating the sample. Compared to the technique of electron beam induced conductivity (EBIC), CCIM produces more damage per projectile but has the compensating advantage that more e-h pairs are created. Analysis of individual pulses rather than an average current therefore is necessary and practicable. Illustrative results are presented for Schottky diodes which have been locally damaged by ion bombardment.

AB - The new technique of Charge Collection Ion Microscopy (CCIM) for investigating defects in semiconductors is described. It utilizes the SUNY/Albany ion microbeam and is based on the collection efficiency of electron-hole (e-h) pairs produced by individual ions penetrating the sample. Compared to the technique of electron beam induced conductivity (EBIC), CCIM produces more damage per projectile but has the compensating advantage that more e-h pairs are created. Analysis of individual pulses rather than an average current therefore is necessary and practicable. Illustrative results are presented for Schottky diodes which have been locally damaged by ion bombardment.

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UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1989CE98500009

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DO - 10.1016/0168-583X(89)90424-2

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SN - 0168-583X

VL - 44

SP - 172

EP - 178

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 2

ER -

Charge collection ion microscopy: Imaging of defects in semiconductors with a positive ion microbeam

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