Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Francesco Ciucci; Carlo De Falco; Marcelo I. Guzman; Sara Lee; Tomonori Honda

doi:10.1063/1.4709483

Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Francesco Ciucci^*, Carlo De Falco, Marcelo I. Guzman, Sara Lee, Tomonori Honda

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

10 Citations (Scopus)

Abstract

The chemisorption of O ₂ on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

Original language	English
Article number	183106
Journal	Applied Physics Letters
Volume	100
Issue number	18
DOIs	https://doi.org/10.1063/1.4709483
Publication status	Published - 30 Apr 2012
Externally published	Yes

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title = "Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions",

abstract = "The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schr{\"o}dinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.",

author = "Francesco Ciucci and \{De Falco\}, Carlo and Guzman, \{Marcelo I.\} and Sara Lee and Tomonori Honda",

year = "2012",

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day = "30",

doi = "10.1063/1.4709483",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Chemisorption on semiconductors

T2 - The role of quantum corrections on the space charge regions in multiple dimensions

AU - Ciucci, Francesco

AU - De Falco, Carlo

AU - Guzman, Marcelo I.

AU - Lee, Sara

AU - Honda, Tomonori

PY - 2012/4/30

Y1 - 2012/4/30

N2 - The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

AB - The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

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UR - https://openalex.org/W2025246000

UR - https://www.scopus.com/pages/publications/84862514378

U2 - 10.1063/1.4709483

DO - 10.1063/1.4709483

M3 - Journal Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183106

ER -

Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Abstract

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