@inproceedings{5fb308cdfb3846409651e0f7a259b006,
title = "CMOS-compatible zero-mask one time programmable (OTP) memory design",
abstract = "A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were fabricated in standard 0.18-μm CMOS technology to verify the functionality of the design.",
author = "Chan, \{Wan Tim\} and Ng, \{K. P.\} and Lee, \{M. C.\} and Kwong, \{K. C.\} and N. Li and Ng, \{Ricky M.Y.\} and MAN, \{Tsz Yin\} and Mansun Chan",
year = "2008",
month = dec,
day = "30",
doi = "10.1109/ICSICT.2008.4734679",
language = "English",
isbn = "9781424421855",
series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",
pages = "861--864",
booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",
note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",
}