Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons"

Weikun Ge; Yong Zhang; Donglin Mi; Jiansheng Zheng; Bingzhang Yan; Boxi Wu

doi:10.1103/PhysRevB.46.5004

Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons"

Weikun Ge^*, Yong Zhang, Donglin Mi, Jiansheng Zheng, Bingzhang Yan, Boxi Wu

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

2 Citations (Scopus)

Abstract

We point out that the experimental data on the temperature dependence of the LO-phonon sidebands of NN4-6 in a recent paper by X. Zhang et al. [Phys. Rev. B 41, 1376 (1990)] are incorrectly analyzed, and that the theory in a closely related paper by Q. Hong, X. Zhang, and K. Dou [Phys. Rev. B 41, 2931 (1990)] is inadequate for explaining the LO-phonon sideband structure and temperature behavior of N-related bound excitons in GaP.

Original language	English
Pages (from-to)	5004-5005
Number of pages	2
Journal	Physical Review B
Volume	46
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.46.5004
Publication status	Published - 1992
Externally published	Yes

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Ge, W., Zhang, Y., Mi, D., Zheng, J., Yan, B., & Wu, B. (1992). Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons". Physical Review B, 46(8), 5004-5005. https://doi.org/10.1103/PhysRevB.46.5004

Ge, Weikun ; Zhang, Yong ; Mi, Donglin et al. / Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons". In: Physical Review B. 1992 ; Vol. 46, No. 8. pp. 5004-5005.

@article{040e6427b9f74f4b91108c1de49ac505,

title = "Comment on {"}Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons{"} and {"}Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons{"}",

abstract = "We point out that the experimental data on the temperature dependence of the LO-phonon sidebands of NN4-6 in a recent paper by X. Zhang et al. [Phys. Rev. B 41, 1376 (1990)] are incorrectly analyzed, and that the theory in a closely related paper by Q. Hong, X. Zhang, and K. Dou [Phys. Rev. B 41, 2931 (1990)] is inadequate for explaining the LO-phonon sideband structure and temperature behavior of N-related bound excitons in GaP.",

author = "Weikun Ge and Yong Zhang and Donglin Mi and Jiansheng Zheng and Bingzhang Yan and Boxi Wu",

year = "1992",

doi = "10.1103/PhysRevB.46.5004",

language = "English",

volume = "46",

pages = "5004--5005",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "8",

}

Ge, W, Zhang, Y, Mi, D, Zheng, J, Yan, B & Wu, B 1992, 'Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons"', Physical Review B, vol. 46, no. 8, pp. 5004-5005. https://doi.org/10.1103/PhysRevB.46.5004

Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons". / Ge, Weikun; Zhang, Yong; Mi, Donglin et al.
In: Physical Review B, Vol. 46, No. 8, 1992, p. 5004-5005.

Research output: Contribution to journal › Review article › peer-review

TY - JOUR

T1 - Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons"

AU - Ge, Weikun

AU - Zhang, Yong

AU - Mi, Donglin

AU - Zheng, Jiansheng

AU - Yan, Bingzhang

AU - Wu, Boxi

PY - 1992

Y1 - 1992

N2 - We point out that the experimental data on the temperature dependence of the LO-phonon sidebands of NN4-6 in a recent paper by X. Zhang et al. [Phys. Rev. B 41, 1376 (1990)] are incorrectly analyzed, and that the theory in a closely related paper by Q. Hong, X. Zhang, and K. Dou [Phys. Rev. B 41, 2931 (1990)] is inadequate for explaining the LO-phonon sideband structure and temperature behavior of N-related bound excitons in GaP.

AB - We point out that the experimental data on the temperature dependence of the LO-phonon sidebands of NN4-6 in a recent paper by X. Zhang et al. [Phys. Rev. B 41, 1376 (1990)] are incorrectly analyzed, and that the theory in a closely related paper by Q. Hong, X. Zhang, and K. Dou [Phys. Rev. B 41, 2931 (1990)] is inadequate for explaining the LO-phonon sideband structure and temperature behavior of N-related bound excitons in GaP.

UR - http://www.scopus.com/inward/record.url?scp=0343107099&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.46.5004

DO - 10.1103/PhysRevB.46.5004

M3 - Review article

AN - SCOPUS:0343107099

SN - 0163-1829

VL - 46

SP - 5004

EP - 5005

JO - Physical Review B

JF - Physical Review B

IS - 8

ER -

Ge W, Zhang Y, Mi D, Zheng J, Yan B, Wu B. Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons". Physical Review B. 1992;46(8):5004-5005. doi: 10.1103/PhysRevB.46.5004

Comment on "Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons" and "Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons"

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