Abstract
In this paper, a direct bonded GaN intelligent power module (IPM) with liquid cooling is demonstrated. A half bridge module with GaN high electron mobility transistors (HEMTs) is bonded on active metal brazed (AMB) substrates which are pre-brazed on a copper liquid-cooled heat exchanger. The design of this power module, such as the selections of the GaN dies and the placement of the GaN dies with respect to the AMB dimensions, is determined based on thermal simulations, estimated electrical parasitics and experiments. The prototype GaN IPMs are demonstrated in a buck converter configuration. The modules are tested up to 110 W with top surface temperature of the PCB module kept below 125°c, measured by an infrared camera (FLIR). The proposed IPM with liquid cooling offers an effective packaging solution for electric vehicle applications.
| Original language | English |
|---|---|
| Title of host publication | 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 123-128 |
| Number of pages | 6 |
| ISBN (Electronic) | 9781665401814 |
| DOIs | |
| Publication status | Published - 2021 |
| Externally published | Yes |
| Event | 8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Virtual, Online, United States Duration: 7 Nov 2021 → 11 Nov 2021 |
Publication series
| Name | 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings |
|---|
Conference
| Conference | 8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 |
|---|---|
| Country/Territory | United States |
| City | Virtual, Online |
| Period | 7/11/21 → 11/11/21 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
Keywords
- Flip-chip bonding
- GaN power module
- Liquid cooling
- Power electronics
- Thermal management
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