Compact Modeling of Capacitance Components for GaN HEMTs

Aixi Zhang; Yandong He; Jin He; Yiqun Wei; Chunlai Li; Guangjin Ma; Xiaomeng He; Rui Wang

doi:10.1109/AEECA49918.2020.9213571

Compact Modeling of Capacitance Components for GaN HEMTs

Aixi Zhang, Yandong He, Jin He, Yiqun Wei, Chunlai Li, Guangjin Ma, Xiaomeng He, Rui Wang

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

The compact Modeling of Capacitance Components for GaN HEMTs is presented in this paper. From the charge control equations, the surface potential is modeled analytically. From the surface potential calculation beginning, various terminal intrinsic charges and capacitance expressions are derived self-consistently with developed I-V model. On the other hand, the parasitic capacitance components are expressed by the means of the conforming method and transport line equation. As a result, the full capacitance model for the GaN HEMT devices are established. With the experimental data and simulation, the developed model is evaluated and verified with good agreements with measured and simulation data.

Original language	English
Title of host publication	Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	505-511
Number of pages	7
ISBN (Electronic)	9781728165202
DOIs	https://doi.org/10.1109/AEECA49918.2020.9213571
Publication status	Published - Aug 2020
Externally published	Yes
Event	2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020 - Dalian, China Duration: 25 Aug 2020 → 27 Aug 2020

Publication series

Name	Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020

Conference

Conference	2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020
Country/Territory	China
City	Dalian
Period	25/08/20 → 27/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

circuit simulation and designing
compact modeling
device physics
GaN-HEMTs
intrinsic capacitance
parasitic capacitance

Access to Document

10.1109/AEECA49918.2020.9213571

Cite this

Zhang, A., He, Y., He, J., Wei, Y., Li, C., Ma, G., He, X., & Wang, R. (2020). Compact Modeling of Capacitance Components for GaN HEMTs. In Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020 (pp. 505-511). Article 9213571 (Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AEECA49918.2020.9213571

Zhang, Aixi ; He, Yandong ; He, Jin et al. / Compact Modeling of Capacitance Components for GaN HEMTs. Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 505-511 (Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020).

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title = "Compact Modeling of Capacitance Components for GaN HEMTs",

abstract = "The compact Modeling of Capacitance Components for GaN HEMTs is presented in this paper. From the charge control equations, the surface potential is modeled analytically. From the surface potential calculation beginning, various terminal intrinsic charges and capacitance expressions are derived self-consistently with developed I-V model. On the other hand, the parasitic capacitance components are expressed by the means of the conforming method and transport line equation. As a result, the full capacitance model for the GaN HEMT devices are established. With the experimental data and simulation, the developed model is evaluated and verified with good agreements with measured and simulation data.",

keywords = "circuit simulation and designing, compact modeling, device physics, GaN-HEMTs, intrinsic capacitance, parasitic capacitance",

author = "Aixi Zhang and Yandong He and Jin He and Yiqun Wei and Chunlai Li and Guangjin Ma and Xiaomeng He and Rui Wang",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020 ; Conference date: 25-08-2020 Through 27-08-2020",

year = "2020",

month = aug,

doi = "10.1109/AEECA49918.2020.9213571",

language = "English",

series = "Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "505--511",

booktitle = "Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020",

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Zhang, A, He, Y, He, J, Wei, Y, Li, C, Ma, G, He, X & Wang, R 2020, Compact Modeling of Capacitance Components for GaN HEMTs. in Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020., 9213571, Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 505-511, 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020, Dalian, China, 25/08/20. https://doi.org/10.1109/AEECA49918.2020.9213571

Compact Modeling of Capacitance Components for GaN HEMTs. / Zhang, Aixi; He, Yandong; He, Jin et al.
Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 505-511 9213571 (Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Compact Modeling of Capacitance Components for GaN HEMTs

AU - Zhang, Aixi

AU - He, Yandong

AU - He, Jin

AU - Wei, Yiqun

AU - Li, Chunlai

AU - Ma, Guangjin

AU - He, Xiaomeng

AU - Wang, Rui

PY - 2020/8

Y1 - 2020/8

N2 - The compact Modeling of Capacitance Components for GaN HEMTs is presented in this paper. From the charge control equations, the surface potential is modeled analytically. From the surface potential calculation beginning, various terminal intrinsic charges and capacitance expressions are derived self-consistently with developed I-V model. On the other hand, the parasitic capacitance components are expressed by the means of the conforming method and transport line equation. As a result, the full capacitance model for the GaN HEMT devices are established. With the experimental data and simulation, the developed model is evaluated and verified with good agreements with measured and simulation data.

AB - The compact Modeling of Capacitance Components for GaN HEMTs is presented in this paper. From the charge control equations, the surface potential is modeled analytically. From the surface potential calculation beginning, various terminal intrinsic charges and capacitance expressions are derived self-consistently with developed I-V model. On the other hand, the parasitic capacitance components are expressed by the means of the conforming method and transport line equation. As a result, the full capacitance model for the GaN HEMT devices are established. With the experimental data and simulation, the developed model is evaluated and verified with good agreements with measured and simulation data.

KW - circuit simulation and designing

KW - compact modeling

KW - device physics

KW - GaN-HEMTs

KW - intrinsic capacitance

KW - parasitic capacitance

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DO - 10.1109/AEECA49918.2020.9213571

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SP - 505

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BT - Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020

Y2 - 25 August 2020 through 27 August 2020

ER -

Zhang A, He Y, He J, Wei Y, Li C, Ma G et al. Compact Modeling of Capacitance Components for GaN HEMTs. In Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 505-511. 9213571. (Proceedings of 2020 IEEE International Conference on Advances in Electrical Engineering and Computer Applications, AEECA 2020). doi: 10.1109/AEECA49918.2020.9213571

Compact Modeling of Capacitance Components for GaN HEMTs

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