Comparative study of high-field endurance for reoxidized-nitrided and fluorinated oxides

Z. H. Liu; P. Nee; P. K. Ko; C. Hu; C. G. Sodini; B. J. Gross; T. P. Ma; Y. C. Cheng

Comparative study of high-field endurance for reoxidized-nitrided and fluorinated oxides

Z. H. Liu^*, P. Nee, P. K. Ko, C. Hu, C. G. Sodini, B. J. Gross, T. P. Ma, Y. C. Cheng

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

Time dependent dielectric breakdown (TDDB) characteristics of reoxidized-nitrided and fluorinated oxide thin films (110A) were examined under electric field and temperature accelerations. Compared with conventional thermal oxides, these oxides have comparable impact ionization coefficients and activation energies, though the charge-to-breakdown are somewhat improved. This finding suggests that the established theory for projecting the minimum thickness of conventional oxide is still applicable to these films. Charge trapping experiments showed that both positive and negative charge trapping can be remarkably reduced by the reoxidation/nitridation process. However, no obvious defect density reduction has been observed for both oxides.

Original language	English
Pages	26-28
Number of pages	3
Publication status	Published - 1991
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 27 Aug 1991 → 29 Aug 1991

Conference

Conference	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	27/08/91 → 29/08/91

Cite this

@conference{ab1093a9401e4a4db96000ff1440ae90,

title = "Comparative study of high-field endurance for reoxidized-nitrided and fluorinated oxides",

abstract = "Time dependent dielectric breakdown (TDDB) characteristics of reoxidized-nitrided and fluorinated oxide thin films (110A) were examined under electric field and temperature accelerations. Compared with conventional thermal oxides, these oxides have comparable impact ionization coefficients and activation energies, though the charge-to-breakdown are somewhat improved. This finding suggests that the established theory for projecting the minimum thickness of conventional oxide is still applicable to these films. Charge trapping experiments showed that both positive and negative charge trapping can be remarkably reduced by the reoxidation/nitridation process. However, no obvious defect density reduction has been observed for both oxides.",

author = "Liu, \{Z. H.\} and P. Nee and Ko, \{P. K.\} and C. Hu and Sodini, \{C. G.\} and Gross, \{B. J.\} and Ma, \{T. P.\} and Cheng, \{Y. C.\}",

year = "1991",

language = "English",

pages = "26--28",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - Comparative study of high-field endurance for reoxidized-nitrided and fluorinated oxides

AU - Liu, Z. H.

AU - Nee, P.

AU - Ko, P. K.

AU - Hu, C.

AU - Sodini, C. G.

AU - Gross, B. J.

AU - Ma, T. P.

AU - Cheng, Y. C.

PY - 1991

Y1 - 1991

N2 - Time dependent dielectric breakdown (TDDB) characteristics of reoxidized-nitrided and fluorinated oxide thin films (110A) were examined under electric field and temperature accelerations. Compared with conventional thermal oxides, these oxides have comparable impact ionization coefficients and activation energies, though the charge-to-breakdown are somewhat improved. This finding suggests that the established theory for projecting the minimum thickness of conventional oxide is still applicable to these films. Charge trapping experiments showed that both positive and negative charge trapping can be remarkably reduced by the reoxidation/nitridation process. However, no obvious defect density reduction has been observed for both oxides.

AB - Time dependent dielectric breakdown (TDDB) characteristics of reoxidized-nitrided and fluorinated oxide thin films (110A) were examined under electric field and temperature accelerations. Compared with conventional thermal oxides, these oxides have comparable impact ionization coefficients and activation energies, though the charge-to-breakdown are somewhat improved. This finding suggests that the established theory for projecting the minimum thickness of conventional oxide is still applicable to these films. Charge trapping experiments showed that both positive and negative charge trapping can be remarkably reduced by the reoxidation/nitridation process. However, no obvious defect density reduction has been observed for both oxides.

UR - http://www.scopus.com/inward/record.url?scp=0025725463&partnerID=8YFLogxK

M3 - Conference Paper

AN - SCOPUS:0025725463

SP - 26

EP - 28

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Comparative study of high-field endurance for reoxidized-nitrided and fluorinated oxides

Abstract

Conference

Other files and links

Fingerprint

Cite this