Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack

Research output: Contribution to conference › Conference Paper › peer-review

Original language	English
Publication status	Published - Jul 2017
Event	12th International Conference on Nitride Semiconductors (ICNS12) - Duration: 1 Jul 2017 → 1 Jul 2017

Conference	12th International Conference on Nitride Semiconductors (ICNS12)
Period	1/07/17 → 1/07/17

Access to Document

@conference{1226e16458d34bb0bd245514d826b539,

title = "Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack",

author = "Zhaofu Zhang and Chen, \{Kevin J.\} and Jiabei He and Mengyuan Hua and Gaofei Tang",

year = "2017",

month = jul,

language = "English",

note = "12th International Conference on Nitride Semiconductors (ICNS12) ; Conference date: 01-07-2017 Through 01-07-2017",

}

TY - CONF

T1 - Comparison of E-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Stack

AU - Zhang, Zhaofu

AU - Chen, Kevin J.

AU - He, Jiabei

AU - Hua, Mengyuan

AU - Tang, Gaofei

PY - 2017/7

Y1 - 2017/7

M3 - Conference Paper

T2 - 12th International Conference on Nitride Semiconductors (ICNS12)

Y2 - 1 July 2017 through 1 July 2017

ER -