Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs

Wei Bian; Jin He; Yu Chen; Yue Fu; Rui Zhang; Lining Zhang; Mansun Chan

doi:10.1109/EDSSC.2007.4450193

Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs

Wei Bian^*, Jin He, Yu Chen, Yue Fu, Rui Zhang, Lining Zhang, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

This paper studied the complication of sub-threshold slope and threshold voltage of undoped Surrounding-Gate (SRG) MOSFETs based on a rigorous classical channel potential model. The detail theoretical analysis demonstrates that the sub-threshold behavior of SRG MOSFETs strongly depends on the silicon body radius. The ideal sub-threshold slope factor S = 60mV/Dec only appears when the body radius is smaller than a critical value. With a larger silicon body radius, a dual sub-threshold slope factor is displayed. The complex sub-threshold behavior of SRG MOSFETs complicates the definition and extraction of the threshold voltage, which has also been studied in this paper.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	589-592
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450193
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan, Province of China Duration: 20 Dec 2007 → 22 Dec 2007

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan, Province of China
City	Tainan
Period	20/12/07 → 22/12/07

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10.1109/EDSSC.2007.4450193

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Bian, W., He, J., Chen, Y., Fu, Y., Zhang, R., Zhang, L., & Chan, M. (2007). Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 589-592). Article 4450193 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450193

@inproceedings{85a81bd92d6c4c6290ee8ba5569dbd8a,

title = "Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs",

abstract = "This paper studied the complication of sub-threshold slope and threshold voltage of undoped Surrounding-Gate (SRG) MOSFETs based on a rigorous classical channel potential model. The detail theoretical analysis demonstrates that the sub-threshold behavior of SRG MOSFETs strongly depends on the silicon body radius. The ideal sub-threshold slope factor S = 60mV/Dec only appears when the body radius is smaller than a critical value. With a larger silicon body radius, a dual sub-threshold slope factor is displayed. The complex sub-threshold behavior of SRG MOSFETs complicates the definition and extraction of the threshold voltage, which has also been studied in this paper.",

author = "Wei Bian and Jin He and Yu Chen and Yue Fu and Rui Zhang and Lining Zhang and Mansun Chan",

year = "2007",

doi = "10.1109/EDSSC.2007.4450193",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "589--592",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Bian, W, He, J, Chen, Y, Fu, Y, Zhang, R, Zhang, L & Chan, M 2007, Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450193, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 589-592, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, Province of China, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450193

Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs. / Bian, Wei; He, Jin; Chen, Yu et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 589-592 4450193 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs

AU - Bian, Wei

AU - He, Jin

AU - Chen, Yu

AU - Fu, Yue

AU - Zhang, Rui

AU - Zhang, Lining

AU - Chan, Mansun

PY - 2007

Y1 - 2007

N2 - This paper studied the complication of sub-threshold slope and threshold voltage of undoped Surrounding-Gate (SRG) MOSFETs based on a rigorous classical channel potential model. The detail theoretical analysis demonstrates that the sub-threshold behavior of SRG MOSFETs strongly depends on the silicon body radius. The ideal sub-threshold slope factor S = 60mV/Dec only appears when the body radius is smaller than a critical value. With a larger silicon body radius, a dual sub-threshold slope factor is displayed. The complex sub-threshold behavior of SRG MOSFETs complicates the definition and extraction of the threshold voltage, which has also been studied in this paper.

AB - This paper studied the complication of sub-threshold slope and threshold voltage of undoped Surrounding-Gate (SRG) MOSFETs based on a rigorous classical channel potential model. The detail theoretical analysis demonstrates that the sub-threshold behavior of SRG MOSFETs strongly depends on the silicon body radius. The ideal sub-threshold slope factor S = 60mV/Dec only appears when the body radius is smaller than a critical value. With a larger silicon body radius, a dual sub-threshold slope factor is displayed. The complex sub-threshold behavior of SRG MOSFETs complicates the definition and extraction of the threshold voltage, which has also been studied in this paper.

UR - https://openalex.org/W2536196923

UR - https://www.scopus.com/pages/publications/43049164000

U2 - 10.1109/EDSSC.2007.4450193

DO - 10.1109/EDSSC.2007.4450193

M3 - Conference Paper published in a book

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 589

EP - 592

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Complicated subthreshold behavior of undoped cylindrical surrounding-gate MOSFETs

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