Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

Cynthia M. Hanson; Ricardo Basco; Farid Agahi; Kei may Lau; R. T. Lareau; T. P. Monahan

doi:10.1007/BF02653351

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

Cynthia M. Hanson^*, Ricardo Basco, Farid Agahi, Kei may Lau, R. T. Lareau, T. P. Monahan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Carrier concentration spikes at the epilayer/substrate interface were observed in some two-dimensional electron gas AIGaAs/GaAs structures grown by low pressure organometallic vapor phase epitaxy. Using secondary ion mass spectroscopy, the carrier spikes were correlated with indium. Under certain growth conditions an anomalous interfacial layer, which is compositionally inhomogeneous, is formed producing an enhanced carrier density. Procedures are described which reduce the presence of indium at the epilayer/substrate interface and eliminate the carrier spike.

Original language	English
Pages (from-to)	649-652
Number of pages	4
Journal	Journal of Electronic Materials
Volume	23
Issue number	7
DOIs	https://doi.org/10.1007/BF02653351
Publication status	Published - Jul 1994
Externally published	Yes

Keywords

AlGaAs/GaAs
epilayer/substrate interface
low pressure organometallic vapor phase epitaxy

Access to Document

10.1007/BF02653351

Cite this

@article{7298afcc59904a64b93b6909c41df614,

title = "Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures",

abstract = "Carrier concentration spikes at the epilayer/substrate interface were observed in some two-dimensional electron gas AIGaAs/GaAs structures grown by low pressure organometallic vapor phase epitaxy. Using secondary ion mass spectroscopy, the carrier spikes were correlated with indium. Under certain growth conditions an anomalous interfacial layer, which is compositionally inhomogeneous, is formed producing an enhanced carrier density. Procedures are described which reduce the presence of indium at the epilayer/substrate interface and eliminate the carrier spike.",

keywords = "AlGaAs/GaAs, epilayer/substrate interface, low pressure organometallic vapor phase epitaxy",

author = "Hanson, \{Cynthia M.\} and Ricardo Basco and Farid Agahi and Lau, \{Kei may\} and Lareau, \{R. T.\} and Monahan, \{T. P.\}",

year = "1994",

month = jul,

doi = "10.1007/BF02653351",

language = "English",

volume = "23",

pages = "649--652",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "7",

}

TY - JOUR

T1 - Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

AU - Hanson, Cynthia M.

AU - Basco, Ricardo

AU - Agahi, Farid

AU - Lau, Kei may

AU - Lareau, R. T.

AU - Monahan, T. P.

PY - 1994/7

Y1 - 1994/7

N2 - Carrier concentration spikes at the epilayer/substrate interface were observed in some two-dimensional electron gas AIGaAs/GaAs structures grown by low pressure organometallic vapor phase epitaxy. Using secondary ion mass spectroscopy, the carrier spikes were correlated with indium. Under certain growth conditions an anomalous interfacial layer, which is compositionally inhomogeneous, is formed producing an enhanced carrier density. Procedures are described which reduce the presence of indium at the epilayer/substrate interface and eliminate the carrier spike.

AB - Carrier concentration spikes at the epilayer/substrate interface were observed in some two-dimensional electron gas AIGaAs/GaAs structures grown by low pressure organometallic vapor phase epitaxy. Using secondary ion mass spectroscopy, the carrier spikes were correlated with indium. Under certain growth conditions an anomalous interfacial layer, which is compositionally inhomogeneous, is formed producing an enhanced carrier density. Procedures are described which reduce the presence of indium at the epilayer/substrate interface and eliminate the carrier spike.

KW - AlGaAs/GaAs

KW - epilayer/substrate interface

KW - low pressure organometallic vapor phase epitaxy

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1994NW06100010

UR - https://openalex.org/W2037527099

UR - https://www.scopus.com/pages/publications/51649141281

U2 - 10.1007/BF02653351

DO - 10.1007/BF02653351

M3 - Journal Article

SN - 0361-5235

VL - 23

SP - 649

EP - 652

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this