Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

J. C. Fan; C. Y. Zhu; B. Yang; S. Fung; C. D. Beling; G. Brauer; W. Anwand; D. Grambole; W. Skorupa; K. S. Wong; Y. C. Zhong; Z. Xie; C. C. Ling

doi:10.1116/1.3525639

Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

J. C. Fan, C. Y. Zhu, B. Yang, S. Fung, C. D. Beling, G. Brauer, W. Anwand, D. Grambole, W. Skorupa, K. S. Wong, Y. C. Zhong, Z. Xie, C. C. Ling

Department of Physics

Research output: Contribution to journal › Journal Article › peer-review

10 Citations (Scopus)

Abstract

Arsenic doped ZnO and ZnMgO films were deposited on SiO₂ using radio frequency magnetron sputtering and ZnO-Zn₃As₂ and ZnO-Zn₃As₂ -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 10¹⁷ cm^-3 and mobility of ∼8 cm² V^-1 s^-1 were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As _Zn-2V_Zn shallow acceptor complex and removes the compensating hydrogen center.

Original language	English
Article number	03A103
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	29
Issue number	3
DOIs	https://doi.org/10.1116/1.3525639
Publication status	Published - May 2011

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Fan, J. C., Zhu, C. Y., Yang, B., Fung, S., Beling, C. D., Brauer, G., Anwand, W., Grambole, D., Skorupa, W., Wong, K. S., Zhong, Y. C., Xie, Z., & Ling, C. C. (2011). Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 29(3), Article 03A103. https://doi.org/10.1116/1.3525639

@article{a1151314e2894e7891a81a5e3708ad38,

title = "Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film",

abstract = "Arsenic doped ZnO and ZnMgO films were deposited on SiO2 using radio frequency magnetron sputtering and ZnO-Zn3As2 and ZnO-Zn3As2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 1017 cm-3 and mobility of ∼8 cm2 V-1 s-1 were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As Zn-2VZn shallow acceptor complex and removes the compensating hydrogen center.",

author = "Fan, \{J. C.\} and Zhu, \{C. Y.\} and B. Yang and S. Fung and Beling, \{C. D.\} and G. Brauer and W. Anwand and D. Grambole and W. Skorupa and Wong, \{K. S.\} and Zhong, \{Y. C.\} and Z. Xie and Ling, \{C. C.\}",

year = "2011",

month = may,

doi = "10.1116/1.3525639",

language = "English",

volume = "29",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

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}

Fan, JC, Zhu, CY, Yang, B, Fung, S, Beling, CD, Brauer, G, Anwand, W, Grambole, D, Skorupa, W, Wong, KS, Zhong, YC, Xie, Z & Ling, CC 2011, 'Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 29, no. 3, 03A103. https://doi.org/10.1116/1.3525639

TY - JOUR

T1 - Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

AU - Fan, J. C.

AU - Zhu, C. Y.

AU - Yang, B.

AU - Fung, S.

AU - Beling, C. D.

AU - Brauer, G.

AU - Anwand, W.

AU - Grambole, D.

AU - Skorupa, W.

AU - Wong, K. S.

AU - Zhong, Y. C.

AU - Xie, Z.

AU - Ling, C. C.

PY - 2011/5

Y1 - 2011/5

N2 - Arsenic doped ZnO and ZnMgO films were deposited on SiO2 using radio frequency magnetron sputtering and ZnO-Zn3As2 and ZnO-Zn3As2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 1017 cm-3 and mobility of ∼8 cm2 V-1 s-1 were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As Zn-2VZn shallow acceptor complex and removes the compensating hydrogen center.

AB - Arsenic doped ZnO and ZnMgO films were deposited on SiO2 using radio frequency magnetron sputtering and ZnO-Zn3As2 and ZnO-Zn3As2 -MgO targets, respectively. It was found that thermal activation is required to activate the formation of p -type conductivity. Hall measurements showed that p -type films with a hole concentration of ∼ 1017 cm-3 and mobility of ∼8 cm2 V-1 s-1 were obtained at substrate temperatures of 400-500 °C. The shallow acceptor formation mechanism was investigated using x-ray photoelectron spectroscopy, positron annihilation, low temperature photoluminescence, and nuclear reaction analysis. The authors suggest that the thermal annealing activates the formation of the As Zn-2VZn shallow acceptor complex and removes the compensating hydrogen center.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000289689000027

UR - https://openalex.org/W2016471242

UR - https://www.scopus.com/pages/publications/79955162022

U2 - 10.1116/1.3525639

DO - 10.1116/1.3525639

M3 - Journal Article

SN - 0734-2101

VL - 29

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

M1 - 03A103

ER -

Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

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