Abstract
In this paper, the contact model analysis based on gold (Au) and aluminum (Al) with distinct structures and bonding pads of GaNbased Micro-LED was proposed. Firstly, the fabrication process and three different structures (testing, bottom emitting and top emitting structures) with 30-200 μm size were introduced. Then, the electrical properties of testing structure were analyzed by extracting the series resistances and ideality factors. Next, the performances of two metals with bottom and top emitting structures were evaluated electrically and optically throughout the injection current at forward bias, leakage current at reverse bias, radiometric power and luminous flux. The final results indicated Au contact is superior to Al for the indium bonding pads on Micro-LEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 853-856 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 52 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2021 |
| Event | 58th International Symposium on Digest of Technical Papers, ICDT 2021 - Virtual, Online Duration: 17 May 2021 → 21 May 2021 |
Bibliographical note
Publisher Copyright:© 2021 SID.
Keywords
- GaN-based Micro-LEDs
- Gold and aluminum contact
- Injection current
- Leakage current
- Luminous flux
- Radiometric power