Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Baiyin Liu; Fujun Xu; Jiaming Wang; Jing Lang; Liubing Wang; Xuzhou Fang; Xuelin Yang; Xiangning Kang; Xinqiang Wang; Zhixin Qin; Weikun Ge; Bo Shen

doi:10.1016/j.spmi.2021.107141

Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Baiyin Liu, Fujun Xu^*, Jiaming Wang, Jing Lang, Liubing Wang, Xuzhou Fang, Xuelin Yang, Xiangning Kang, Xinqiang Wang, Zhixin Qin, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

12 Citations (Scopus)

Abstract

Correlation between electrical properties and growth dynamics for Si-doped AlGaN with Al mole fraction above 60% has been investigated. It is found that the electron concentration decreases significantly when decreasing the growth rate, while the electron mobility experiences a non-monotonic process of increasing at first and then decreasing. Combination of secondary ion mass spectroscopy and panchromatic cathodoluminescence results, reveals that the evolution of electrical properties mainly originates from compensation of III vacancy (V_III) to Si dopant, making V_III-nSi complexes, i.e., the concentrations of V_III-nSi complexes increase with decreasing the growth rate, implying high growth rate principle is vital for n-AlGaN.

Original language	English
Article number	107141
Journal	Micro and Nanostructures
Volume	163
DOIs	https://doi.org/10.1016/j.spmi.2021.107141
Publication status	Published - Mar 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2021

Keywords

Al-rich n-AlGaN
Electrical properties
Growth dynamics
Self-compensation

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10.1016/j.spmi.2021.107141

Cite this

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title = "Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition",

abstract = "Correlation between electrical properties and growth dynamics for Si-doped AlGaN with Al mole fraction above 60\% has been investigated. It is found that the electron concentration decreases significantly when decreasing the growth rate, while the electron mobility experiences a non-monotonic process of increasing at first and then decreasing. Combination of secondary ion mass spectroscopy and panchromatic cathodoluminescence results, reveals that the evolution of electrical properties mainly originates from compensation of III vacancy (VIII) to Si dopant, making VIII-nSi complexes, i.e., the concentrations of VIII-nSi complexes increase with decreasing the growth rate, implying high growth rate principle is vital for n-AlGaN.",

keywords = "Al-rich n-AlGaN, Electrical properties, Growth dynamics, Self-compensation",

author = "Baiyin Liu and Fujun Xu and Jiaming Wang and Jing Lang and Liubing Wang and Xuzhou Fang and Xuelin Yang and Xiangning Kang and Xinqiang Wang and Zhixin Qin and Weikun Ge and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2022",

month = mar,

doi = "10.1016/j.spmi.2021.107141",

language = "English",

volume = "163",

journal = "Micro and Nanostructures",

issn = "2773-0123",

}

TY - JOUR

T1 - Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

AU - Liu, Baiyin

AU - Xu, Fujun

AU - Wang, Jiaming

AU - Lang, Jing

AU - Wang, Liubing

AU - Fang, Xuzhou

AU - Yang, Xuelin

AU - Kang, Xiangning

AU - Wang, Xinqiang

AU - Qin, Zhixin

AU - Ge, Weikun

AU - Shen, Bo

PY - 2022/3

Y1 - 2022/3

N2 - Correlation between electrical properties and growth dynamics for Si-doped AlGaN with Al mole fraction above 60% has been investigated. It is found that the electron concentration decreases significantly when decreasing the growth rate, while the electron mobility experiences a non-monotonic process of increasing at first and then decreasing. Combination of secondary ion mass spectroscopy and panchromatic cathodoluminescence results, reveals that the evolution of electrical properties mainly originates from compensation of III vacancy (VIII) to Si dopant, making VIII-nSi complexes, i.e., the concentrations of VIII-nSi complexes increase with decreasing the growth rate, implying high growth rate principle is vital for n-AlGaN.

AB - Correlation between electrical properties and growth dynamics for Si-doped AlGaN with Al mole fraction above 60% has been investigated. It is found that the electron concentration decreases significantly when decreasing the growth rate, while the electron mobility experiences a non-monotonic process of increasing at first and then decreasing. Combination of secondary ion mass spectroscopy and panchromatic cathodoluminescence results, reveals that the evolution of electrical properties mainly originates from compensation of III vacancy (VIII) to Si dopant, making VIII-nSi complexes, i.e., the concentrations of VIII-nSi complexes increase with decreasing the growth rate, implying high growth rate principle is vital for n-AlGaN.

KW - Al-rich n-AlGaN

KW - Electrical properties

KW - Growth dynamics

KW - Self-compensation

UR - https://www.scopus.com/pages/publications/85122294022

U2 - 10.1016/j.spmi.2021.107141

DO - 10.1016/j.spmi.2021.107141

M3 - Journal Article

AN - SCOPUS:85122294022

SN - 2773-0123

VL - 163

JO - Micro and Nanostructures

JF - Micro and Nanostructures

M1 - 107141

ER -

Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Abstract

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Keywords

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