Correlation Between Substrate and Gate Currents in MOSFET's

Simon Tam; Ping Keung Ko; Ping Keung Ko; Chenming Hu; Richard S. Muller

doi:10.1109/T-ED.1982.21019

Correlation Between Substrate and Gate Currents in MOSFET's

Simon Tam, Ping Keung Ko, Ping Keung Ko, Chenming Hu, Richard S. Muller

Research output: Contribution to journal › Journal Article › peer-review

52 Citations (Scopus)

Abstract

A correlation between substrate and gate currents in MOSFET’s is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET’s with a range of geometries and bias values.

Original language	English
Pages (from-to)	1740-1744
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	29
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1982.21019
Publication status	Published - Nov 1982
Externally published	Yes

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10.1109/T-ED.1982.21019

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title = "Correlation Between Substrate and Gate Currents in MOSFET's",

abstract = "A correlation between substrate and gate currents in MOSFET{\textquoteright}s is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET{\textquoteright}s with a range of geometries and bias values.",

author = "Simon Tam and Ko, \{Ping Keung\} and Ko, \{Ping Keung\} and Chenming Hu and Muller, \{Richard S.\}",

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AU - Muller, Richard S.

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AB - A correlation between substrate and gate currents in MOSFET’s is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET’s with a range of geometries and bias values.

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Correlation Between Substrate and Gate Currents in MOSFET's

Abstract

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