Corrigendum to "An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration" [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010)

Jin He; Wei Bian; Yadong Tao; Feng Liu; Kailiang Lu; Wen Wu; Ting Wang; Mansun Chan

doi:10.1016/j.sse.2007.03.003

Corrigendum to "An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration" [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010)

Jin He^*
, Wei Bian
, Yadong Tao
, Feng Liu
, Kailiang Lu
, Wen Wu
, Ting Wang
, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	816
Number of pages	1
Journal	Solid-State Electronics
Volume	51
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2007.03.003
Publication status	Published - May 2007

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10.1016/j.sse.2007.03.003

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He, J., Bian, W., Tao, Y., Liu, F., Lu, K., Wu, W., Wang, T., & Chan, M. (2007). Corrigendum to "An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration" [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010). Solid-State Electronics, 51(5), 816. https://doi.org/10.1016/j.sse.2007.03.003

@article{6f76b01c694d4415aa2f904500937812,

title = "Corrigendum to {"}An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration{"} [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010)",

author = "Jin He and Wei Bian and Yadong Tao and Feng Liu and Kailiang Lu and Wen Wu and Ting Wang and Mansun Chan",

year = "2007",

month = may,

doi = "10.1016/j.sse.2007.03.003",

language = "English",

volume = "51",

pages = "816",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "5",

}

He, J, Bian, W, Tao, Y, Liu, F, Lu, K, Wu, W, Wang, T & Chan, M 2007, 'Corrigendum to "An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration" [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010)', Solid-State Electronics, vol. 51, no. 5, pp. 816. https://doi.org/10.1016/j.sse.2007.03.003

Corrigendum to "An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration" [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010). / He, Jin; Bian, Wei; Tao, Yadong et al.
In: Solid-State Electronics, Vol. 51, No. 5, 05.2007, p. 816.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Corrigendum to "An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration" [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010)

AU - He, Jin

AU - Bian, Wei

AU - Tao, Yadong

AU - Liu, Feng

AU - Lu, Kailiang

AU - Wu, Wen

AU - Wang, Ting

AU - Chan, Mansun

PY - 2007/5

Y1 - 2007/5

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000247353200030

UR - https://openalex.org/W2017757535

U2 - 10.1016/j.sse.2007.03.003

DO - 10.1016/j.sse.2007.03.003

M3 - Comment/debate

SN - 0038-1101

VL - 51

SP - 816

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Corrigendum to "An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration" [Solid-State Electron. 51 (2007) 179-185] (DOI:10.1016/j.sse.2006.11.010)

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