DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

Haiying Chen; Chengfeng Qiu; Man Wong; Hoi Sing Kwok

doi:10.1109/LED.2003.812550

DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

Haiying Chen^*, Chengfeng Qiu, Man Wong, Hoi Sing Kwok

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

31 Citations (Scopus)

Abstract

The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by dc sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently a high dc sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.

Original language	English
Pages (from-to)	315-317
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	5
DOIs	https://doi.org/10.1109/LED.2003.812550
Publication status	Published - 1 May 2003

Keywords

Indium-tin oxide
Organic light-emitting diodes
Sputtering
Top-emission
Transparent cathode

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10.1109/LED.2003.812550

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title = "DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode",

abstract = "The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by dc sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently a high dc sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.",

keywords = "Indium-tin oxide, Organic light-emitting diodes, Sputtering, Top-emission, Transparent cathode",

author = "Haiying Chen and Chengfeng Qiu and Man Wong and Kwok, \{Hoi Sing\}",

year = "2003",

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doi = "10.1109/LED.2003.812550",

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T1 - DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

AU - Chen, Haiying

AU - Qiu, Chengfeng

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by dc sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently a high dc sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.

AB - The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by dc sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently a high dc sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.

KW - Indium-tin oxide

KW - Organic light-emitting diodes

KW - Sputtering

KW - Top-emission

KW - Transparent cathode

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UR - https://openalex.org/W2098311419

UR - https://www.scopus.com/pages/publications/0042674247

U2 - 10.1109/LED.2003.812550

DO - 10.1109/LED.2003.812550

M3 - Journal Article

SN - 0741-3106

VL - 24

SP - 315

EP - 317

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

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Keywords

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