Degradation of N2O-annealed MOSFET characteristics in response to dynamic oxide stressing

James C. Chen; Zhihong Liu; J. T. Krick; Ping K. Ko; Chenming Hu

doi:10.1109/55.215175

Degradation of N₂O-annealed MOSFET characteristics in response to dynamic oxide stressing

James C. Chen^*, Zhihong Liu, J. T. Krick, Ping K. Ko, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

The performance of n-MOSFET's with furnace N₂O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N₂O-annealed devices compared with that for devices with OX. In addition, a smaller V_t shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both G_m and D_it revealed a 'peak' frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.

Original language	English
Pages (from-to)	225-227
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	5
DOIs	https://doi.org/10.1109/55.215175
Publication status	Published - 1993
Externally published	Yes

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title = "Degradation of N2O-annealed MOSFET characteristics in response to dynamic oxide stressing",

abstract = "The performance of n-MOSFET's with furnace N2O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N2O-annealed devices compared with that for devices with OX. In addition, a smaller Vt shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both Gm and Dit revealed a 'peak' frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.",

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AU - Chen, James C.

AU - Liu, Zhihong

AU - Krick, J. T.

AU - Ko, Ping K.

AU - Hu, Chenming

PY - 1993

Y1 - 1993

N2 - The performance of n-MOSFET's with furnace N2O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N2O-annealed devices compared with that for devices with OX. In addition, a smaller Vt shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both Gm and Dit revealed a 'peak' frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.

AB - The performance of n-MOSFET's with furnace N2O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N2O-annealed devices compared with that for devices with OX. In addition, a smaller Vt shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both Gm and Dit revealed a 'peak' frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Degradation of N₂O-annealed MOSFET characteristics in response to dynamic oxide stressing

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