Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation

Research output: Contribution to conference › Conference Paper › peer-review

Original language	English
Publication status	Published - Jan 2014
Event	Technical Meeting of IEICE Japan on Electron Devices - Duration: 1 Jan 2014 → 1 Jan 2014

Conference	Technical Meeting of IEICE Japan on Electron Devices
Period	1/01/14 → 1/01/14

Access to Document

@conference{05b9067dbe564e8d8485dca71212f1e3,

title = "Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation",

author = "M. Higashiwaki and T. Kamimura and D. Krishnamurthy and A. Kuramata and T. Masui and K. Sasaki and Wong, \{Man Hoi\} and S. Yamakoshi",

year = "2014",

month = jan,

language = "English",

note = "Technical Meeting of IEICE Japan on Electron Devices ; Conference date: 01-01-2014 Through 01-01-2014",

}

TY - CONF

T1 - Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation

AU - Higashiwaki, M.

AU - Kamimura, T.

AU - Krishnamurthy, D.

AU - Kuramata, A.

AU - Masui, T.

AU - Sasaki, K.

AU - Wong, Man Hoi

AU - Yamakoshi, S.

PY - 2014/1

Y1 - 2014/1

M3 - Conference Paper

T2 - Technical Meeting of IEICE Japan on Electron Devices

Y2 - 1 January 2014 through 1 January 2014

ER -