Abstract
In this article, design and characterization of the deep-trench, U-shaped field-plate (DTUFP) edge-termination structure for 1200-V-class silicon carbide (SiC) devices are presented. A systematic numerical analysis shows that the trench depth, trench width, field-plate depth, and field-plate length are the four key structural parameters to determine the voltage blocking capability of the edge-termination structure. Experimental results demonstrate that the breakdown voltage of the proposed edge-termination structure can reach 1380 V when the edge-termination structure is well designed. Liquid crystal thermal measurement and destructive breakdown testing show that the ideal planar junction breakdown voltage has been achieved. The well-designed edge-termination structure has an ultrashort-edge width of 33 μm , which is approximately 75% shorter than that of the conventional guard-ring and junction termination extension (JTE) edge-termination structures.
| Original language | English |
|---|---|
| Article number | 8793109 |
| Pages (from-to) | 4251-4257 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 66 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 2019 |
Bibliographical note
Publisher Copyright:© 1963-2012 IEEE.
Keywords
- Deep-trench edge termination
- ideal planar junction breakdown voltage
- liquid crystal (LC) thermal measurement
- power semiconductor devices
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