Design and fabrication of the reliable GaN based vertical-cavity surface-emitting laser via tunnel junction

Chih Chiang Shen; Yun Ting Lu; Yen Wei Yeh; Cheng Yuan Chen; Yu Tzu Chen; Chin Wei Sher; Po Tsung Lee; Ya Hsuan Shih; Tien Chang Lu; Tingzhu Wu; Ching Hsueh Chiu; Hao Chung Kuo

doi:10.3390/cryst9040187

Design and fabrication of the reliable GaN based vertical-cavity surface-emitting laser via tunnel junction

Chih Chiang Shen, Yun Ting Lu, Yen Wei Yeh, Cheng Yuan Chen, Yu Tzu Chen, Chin Wei Sher, Po Tsung Lee, Ya Hsuan Shih, Tien Chang Lu, Tingzhu Wu^*, Ching Hsueh Chiu, Hao Chung Kuo

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

19 Citations (Scopus)

Abstract

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J _th ) from 12 to 8.5 kA/cm ² , and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 ◦C) and high operation current (1.5 × J _th ) test for over 500 h.

Original language	English
Article number	187
Journal	Crystals
Volume	9
Issue number	4
DOIs	https://doi.org/10.3390/cryst9040187
Publication status	Published - Apr 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2019 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

InGaN
Tunnel junction
VCSEL

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10.3390/cryst9040187

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@article{3229795f676d4c048f3365ff40c20e2b,

title = "Design and fabrication of the reliable GaN based vertical-cavity surface-emitting laser via tunnel junction",

abstract = " In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J th ) from 12 to 8.5 kA/cm 2 , and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 ◦C) and high operation current (1.5 × J th ) test for over 500 h.",

keywords = "InGaN, Tunnel junction, VCSEL",

author = "Shen, \{Chih Chiang\} and Lu, \{Yun Ting\} and Yeh, \{Yen Wei\} and Chen, \{Cheng Yuan\} and Chen, \{Yu Tzu\} and Sher, \{Chin Wei\} and Lee, \{Po Tsung\} and Shih, \{Ya Hsuan\} and Lu, \{Tien Chang\} and Tingzhu Wu and Chiu, \{Ching Hsueh\} and Kuo, \{Hao Chung\}",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2019",

month = apr,

doi = "10.3390/cryst9040187",

language = "English",

volume = "9",

journal = "Crystals",

issn = "2073-4352",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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T1 - Design and fabrication of the reliable GaN based vertical-cavity surface-emitting laser via tunnel junction

AU - Shen, Chih Chiang

AU - Lu, Yun Ting

AU - Yeh, Yen Wei

AU - Chen, Cheng Yuan

AU - Chen, Yu Tzu

AU - Sher, Chin Wei

AU - Lee, Po Tsung

AU - Shih, Ya Hsuan

AU - Lu, Tien Chang

AU - Wu, Tingzhu

AU - Chiu, Ching Hsueh

AU - Kuo, Hao Chung

PY - 2019/4

Y1 - 2019/4

N2 - In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J th ) from 12 to 8.5 kA/cm 2 , and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 ◦C) and high operation current (1.5 × J th ) test for over 500 h.

AB - In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J th ) from 12 to 8.5 kA/cm 2 , and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 ◦C) and high operation current (1.5 × J th ) test for over 500 h.

KW - InGaN

KW - Tunnel junction

KW - VCSEL

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UR - https://openalex.org/W2929896546

UR - https://www.scopus.com/pages/publications/85065913085

U2 - 10.3390/cryst9040187

DO - 10.3390/cryst9040187

M3 - Journal Article

SN - 2073-4352

VL - 9

JO - Crystals

JF - Crystals

IS - 4

M1 - 187

ER -

Design and fabrication of the reliable GaN based vertical-cavity surface-emitting laser via tunnel junction

Abstract

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Keywords

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