Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

Design of Al₂O₃/LaAlO₃/SiO₂ Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

Original language	English
Publication status	Published - Sept 2023
Event	International Conference on Silicon Carbide and Related Materials (ICSCRM 2023) - Duration: 1 Sept 2023 → 1 Sept 2023

Conference	International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)
Period	1/09/23 → 1/09/23

@conference{26e38ef82e71424d988dc38f37a2cb5b,

title = "Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs",

author = "Fujishima Naoto and Yuichi Onozawa and Takashi Tsuji and Linhua Huang and Yong Liu and Xin Peng and Sin, \{Johnny Kin On\}",

year = "2023",

month = sep,

language = "English",

note = "International Conference on Silicon Carbide and Related Materials (ICSCRM 2023) ; Conference date: 01-09-2023 Through 01-09-2023",

}

TY - CONF

T1 - Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

AU - Naoto, Fujishima

AU - Onozawa, Yuichi

AU - Tsuji, Takashi

AU - Huang, Linhua

AU - Liu, Yong

AU - Peng, Xin

AU - Sin, Johnny Kin On

PY - 2023/9

Y1 - 2023/9

M3 - Conference Paper

T2 - International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Y2 - 1 September 2023 through 1 September 2023

ER -