Design of monolithic RF power amplifier using bulk BiCMOS process

W. C. Chan; Philip K.T. Mok; Johnny K.O. Sin; W. T. Ng

Design of monolithic RF power amplifier using bulk BiCMOS process

W. C. Chan^*, Philip K.T. Mok, Johnny K.O. Sin, W. T. Ng

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

A low-voltage monolithic 900MHz power amplifier has been fabricated in a commercial 0.8μm bulk BiCMOS process with an integrated output tuned circuit. The tuned circuit is implemented by a monolithic inductor of 2.6nH with 54μm metal width. The output power of the amplifier is 14dBm.

Original language	English
Pages	10-13
Number of pages	4
Publication status	Published - 1999
Event	1999 IEEE 42nd Midwest Symposium on Circuits and Sistems - Las Cruces, NM, USA Duration: 8 Aug 1999 → 11 Aug 1999

Conference

Conference	1999 IEEE 42nd Midwest Symposium on Circuits and Sistems
City	Las Cruces, NM, USA
Period	8/08/99 → 11/08/99

Access to Document

https://hdl.handle.net/1783.1/2195

Cite this

@conference{ba788c62c01c42d3a22334f2608cf7b5,

title = "Design of monolithic RF power amplifier using bulk BiCMOS process",

abstract = "A low-voltage monolithic 900MHz power amplifier has been fabricated in a commercial 0.8μm bulk BiCMOS process with an integrated output tuned circuit. The tuned circuit is implemented by a monolithic inductor of 2.6nH with 54μm metal width. The output power of the amplifier is 14dBm.",

author = "Chan, \{W. C.\} and Mok, \{Philip K.T.\} and Sin, \{Johnny K.O.\} and Ng, \{W. T.\}",

year = "1999",

language = "English",

pages = "10--13",

note = "1999 IEEE 42nd Midwest Symposium on Circuits and Sistems ; Conference date: 08-08-1999 Through 11-08-1999",

}

TY - CONF

T1 - Design of monolithic RF power amplifier using bulk BiCMOS process

AU - Chan, W. C.

AU - Mok, Philip K.T.

AU - Sin, Johnny K.O.

AU - Ng, W. T.

PY - 1999

Y1 - 1999

N2 - A low-voltage monolithic 900MHz power amplifier has been fabricated in a commercial 0.8μm bulk BiCMOS process with an integrated output tuned circuit. The tuned circuit is implemented by a monolithic inductor of 2.6nH with 54μm metal width. The output power of the amplifier is 14dBm.

AB - A low-voltage monolithic 900MHz power amplifier has been fabricated in a commercial 0.8μm bulk BiCMOS process with an integrated output tuned circuit. The tuned circuit is implemented by a monolithic inductor of 2.6nH with 54μm metal width. The output power of the amplifier is 14dBm.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000089525800003

UR - https://www.scopus.com/pages/publications/0033292645

M3 - Conference Paper

SP - 10

EP - 13

T2 - 1999 IEEE 42nd Midwest Symposium on Circuits and Sistems

Y2 - 8 August 1999 through 11 August 1999

ER -

Design of monolithic RF power amplifier using bulk BiCMOS process

Abstract

Conference

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