Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

Wai Tung Ng; Jingshu Yu; Mengqi Wang; Rophina Li; Weijia Zhang

doi:10.1109/ICSICT.2018.8564869

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

Wai Tung Ng, Jingshu Yu, Mengqi Wang, Rophina Li, Weijia Zhang

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

8 Citations (Scopus)

Abstract

Gallium nitride (GaN) power transistors are gaining rapid acceptance by the power electronics industry as the next generation wide bandgap (WBG) power semiconductor technology. Early direct drop-in replacement attempts of the silicon based power MOSFETs with GaN power devices either produce no significant performance improvement or even degradation in some situations. This is mainly due to the fact that the GaN power devices were not driven properly to fully exploit their true performance. In this paper, different gate driving techniques for both depletion and enhancement mode GaN power transistors are examined. In addition, the recent trends on integrated GaN pre-driver and GaN power ICs is also discussed.

Original language	English
Title of host publication	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
Editors	Ting-Ao Tang, Fan Ye, Yu-Long Jiang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538644409
DOIs	https://doi.org/10.1109/ICSICT.2018.8564869
Publication status	Published - 5 Dec 2018
Externally published	Yes
Event	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China Duration: 31 Oct 2018 → 3 Nov 2018

Publication series

Name	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/Territory	China
City	Qingdao
Period	31/10/18 → 3/11/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

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10.1109/ICSICT.2018.8564869

Cite this

Ng, W. T., Yu, J., Wang, M., Li, R., & Zhang, W. (2018). Design Trends in Smart Gate Driver ICs for Power GaN HEMTs. In T.-A. Tang, F. Ye, & Y.-L. Jiang (Eds.), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings Article 8564869 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2018.8564869

Ng, Wai Tung ; Yu, Jingshu ; Wang, Mengqi et al. / Design Trends in Smart Gate Driver ICs for Power GaN HEMTs. 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. editor / Ting-Ao Tang ; Fan Ye ; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

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title = "Design Trends in Smart Gate Driver ICs for Power GaN HEMTs",

abstract = "Gallium nitride (GaN) power transistors are gaining rapid acceptance by the power electronics industry as the next generation wide bandgap (WBG) power semiconductor technology. Early direct drop-in replacement attempts of the silicon based power MOSFETs with GaN power devices either produce no significant performance improvement or even degradation in some situations. This is mainly due to the fact that the GaN power devices were not driven properly to fully exploit their true performance. In this paper, different gate driving techniques for both depletion and enhancement mode GaN power transistors are examined. In addition, the recent trends on integrated GaN pre-driver and GaN power ICs is also discussed.",

author = "Ng, \{Wai Tung\} and Jingshu Yu and Mengqi Wang and Rophina Li and Weijia Zhang",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",

year = "2018",

month = dec,

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doi = "10.1109/ICSICT.2018.8564869",

language = "English",

series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Ng, WT, Yu, J, Wang, M, Li, R & Zhang, W 2018, Design Trends in Smart Gate Driver ICs for Power GaN HEMTs. in T-A Tang, F Ye & Y-L Jiang (eds), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings., 8564869, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, Qingdao, China, 31/10/18. https://doi.org/10.1109/ICSICT.2018.8564869

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs. / Ng, Wai Tung; Yu, Jingshu; Wang, Mengqi et al.
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. ed. / Ting-Ao Tang; Fan Ye; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. 8564869 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

AU - Ng, Wai Tung

AU - Yu, Jingshu

AU - Wang, Mengqi

AU - Li, Rophina

AU - Zhang, Weijia

PY - 2018/12/5

Y1 - 2018/12/5

N2 - Gallium nitride (GaN) power transistors are gaining rapid acceptance by the power electronics industry as the next generation wide bandgap (WBG) power semiconductor technology. Early direct drop-in replacement attempts of the silicon based power MOSFETs with GaN power devices either produce no significant performance improvement or even degradation in some situations. This is mainly due to the fact that the GaN power devices were not driven properly to fully exploit their true performance. In this paper, different gate driving techniques for both depletion and enhancement mode GaN power transistors are examined. In addition, the recent trends on integrated GaN pre-driver and GaN power ICs is also discussed.

AB - Gallium nitride (GaN) power transistors are gaining rapid acceptance by the power electronics industry as the next generation wide bandgap (WBG) power semiconductor technology. Early direct drop-in replacement attempts of the silicon based power MOSFETs with GaN power devices either produce no significant performance improvement or even degradation in some situations. This is mainly due to the fact that the GaN power devices were not driven properly to fully exploit their true performance. In this paper, different gate driving techniques for both depletion and enhancement mode GaN power transistors are examined. In addition, the recent trends on integrated GaN pre-driver and GaN power ICs is also discussed.

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M3 - Conference Paper published in a book

T3 - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

BT - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

A2 - Tang, Ting-Ao

A2 - Ye, Fan

A2 - Jiang, Yu-Long

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018

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ER -

Ng WT, Yu J, Wang M, Li R, Zhang W. Design Trends in Smart Gate Driver ICs for Power GaN HEMTs. In Tang TA, Ye F, Jiang YL, editors, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8564869. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). doi: 10.1109/ICSICT.2018.8564869

Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

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