Device degradation of n-channel poly-Si TFT's due to high-field, hot-carrier and radiation stressing

A. Khamesra; R. Lal; J. Vasi; K. P.A. Kumar; J. K.O. Sin

Device degradation of n-channel poly-Si TFT's due to high-field, hot-carrier and radiation stressing

A. Khamesra
, R. Lal
, J. Vasi^*
, K. P.A. Kumar
, J. K.O. Sin

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

9 Citations (Scopus)

Abstract

Degradation in low-temperature poly-Si TFT devices was studied for high-field stressing hot-carrier stressing as well as gamma radiation stressing. It was found that degradation is dominated by electron trapping in the gate oxide that causes a parallel rightward shift in the transfer curves. The other probable mechanisms involved include generation of mid-gap defects in the bulk polysilicon and creation of mid-gap defects in the bulk polysilicon and creation of interface states at the Si/SiO₂ interface.

Original language	English
Pages	258-262
Number of pages	5
Publication status	Published - 2001
Externally published	Yes
Event	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) - Singapure, Singapore Duration: 9 Jul 2001 → 13 Jul 2001

Conference

Conference	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)
Country/Territory	Singapore
City	Singapure
Period	9/07/01 → 13/07/01

Cite this

@conference{ae4a02088aec4c0cb9db378bd3b1356e,

title = "Device degradation of n-channel poly-Si TFT's due to high-field, hot-carrier and radiation stressing",

abstract = "Degradation in low-temperature poly-Si TFT devices was studied for high-field stressing hot-carrier stressing as well as gamma radiation stressing. It was found that degradation is dominated by electron trapping in the gate oxide that causes a parallel rightward shift in the transfer curves. The other probable mechanisms involved include generation of mid-gap defects in the bulk polysilicon and creation of mid-gap defects in the bulk polysilicon and creation of interface states at the Si/SiO2 interface.",

author = "A. Khamesra and R. Lal and J. Vasi and Kumar, \{K. P.A.\} and Sin, \{J. K.O.\}",

year = "2001",

language = "English",

pages = "258--262",

note = "8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) ; Conference date: 09-07-2001 Through 13-07-2001",

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Device degradation of n-channel poly-Si TFT's due to high-field, hot-carrier and radiation stressing. / Khamesra, A.; Lal, R.; Vasi, J. et al.
2001. 258-262 Paper presented at 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001), Singapure, Singapore.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Device degradation of n-channel poly-Si TFT's due to high-field, hot-carrier and radiation stressing

AU - Khamesra, A.

AU - Lal, R.

AU - Vasi, J.

AU - Kumar, K. P.A.

AU - Sin, J. K.O.

PY - 2001

Y1 - 2001

N2 - Degradation in low-temperature poly-Si TFT devices was studied for high-field stressing hot-carrier stressing as well as gamma radiation stressing. It was found that degradation is dominated by electron trapping in the gate oxide that causes a parallel rightward shift in the transfer curves. The other probable mechanisms involved include generation of mid-gap defects in the bulk polysilicon and creation of mid-gap defects in the bulk polysilicon and creation of interface states at the Si/SiO2 interface.

AB - Degradation in low-temperature poly-Si TFT devices was studied for high-field stressing hot-carrier stressing as well as gamma radiation stressing. It was found that degradation is dominated by electron trapping in the gate oxide that causes a parallel rightward shift in the transfer curves. The other probable mechanisms involved include generation of mid-gap defects in the bulk polysilicon and creation of mid-gap defects in the bulk polysilicon and creation of interface states at the Si/SiO2 interface.

UR - https://www.scopus.com/pages/publications/0034819161

M3 - Conference Paper

AN - SCOPUS:0034819161

SP - 258

EP - 262

T2 - 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)

Y2 - 9 July 2001 through 13 July 2001

ER -

Device degradation of n-channel poly-Si TFT's due to high-field, hot-carrier and radiation stressing

Abstract

Conference

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