Dilute-Anion III-nitride: A potential visible light emitter

Chee Keong Tan; Wei Sun; Damir Borovac; Jonathan J. Wierer; Nelson Tansu

doi:10.1109/IPCon.2016.7831087

Dilute-Anion III-nitride: A potential visible light emitter

Chee Keong Tan, Wei Sun, Damir Borovac, Jonathan J. Wierer, Nelson Tansu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

The spontaneous emission characteristics of InGaN / dilute-As GaNAs interface quantum well for the visible spectral regime were calculated and analyzed, and the findings revealed the strong potential of implementing the dilute-Anion IIINitride alloy as active region for high efficiency visible light emitter.

Original language	English
Title of host publication	2016 IEEE Photonics Conference, IPC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	834-835
Number of pages	2
ISBN (Electronic)	9781509019069
DOIs	https://doi.org/10.1109/IPCon.2016.7831087
Publication status	Published - 23 Jan 2017
Externally published	Yes
Event	29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States Duration: 2 Oct 2016 → 6 Oct 2016

Publication series

Name	2016 IEEE Photonics Conference, IPC 2016

Conference

Conference	29th IEEE Photonics Conference, IPC 2016
Country/Territory	United States
City	Waikoloa
Period	2/10/16 → 6/10/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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10.1109/IPCon.2016.7831087

Cite this

@inproceedings{32532a37043f4a2cb48ce81d79ad80f0,

title = "Dilute-Anion III-nitride: A potential visible light emitter",

abstract = "The spontaneous emission characteristics of InGaN / dilute-As GaNAs interface quantum well for the visible spectral regime were calculated and analyzed, and the findings revealed the strong potential of implementing the dilute-Anion IIINitride alloy as active region for high efficiency visible light emitter.",

author = "Tan, \{Chee Keong\} and Wei Sun and Damir Borovac and Wierer, \{Jonathan J.\} and Nelson Tansu",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE Photonics Conference, IPC 2016 ; Conference date: 02-10-2016 Through 06-10-2016",

year = "2017",

month = jan,

day = "23",

doi = "10.1109/IPCon.2016.7831087",

language = "English",

series = "2016 IEEE Photonics Conference, IPC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "834--835",

booktitle = "2016 IEEE Photonics Conference, IPC 2016",

}

Tan, CK, Sun, W, Borovac, D, Wierer, JJ & Tansu, N 2017, Dilute-Anion III-nitride: A potential visible light emitter. in 2016 IEEE Photonics Conference, IPC 2016., 7831087, 2016 IEEE Photonics Conference, IPC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 834-835, 29th IEEE Photonics Conference, IPC 2016, Waikoloa, United States, 2/10/16. https://doi.org/10.1109/IPCon.2016.7831087

Dilute-Anion III-nitride: A potential visible light emitter. / Tan, Chee Keong; Sun, Wei; Borovac, Damir et al.
2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 834-835 7831087 (2016 IEEE Photonics Conference, IPC 2016).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Dilute-Anion III-nitride

T2 - 29th IEEE Photonics Conference, IPC 2016

AU - Tan, Chee Keong

AU - Sun, Wei

AU - Borovac, Damir

AU - Wierer, Jonathan J.

AU - Tansu, Nelson

PY - 2017/1/23

Y1 - 2017/1/23

N2 - The spontaneous emission characteristics of InGaN / dilute-As GaNAs interface quantum well for the visible spectral regime were calculated and analyzed, and the findings revealed the strong potential of implementing the dilute-Anion IIINitride alloy as active region for high efficiency visible light emitter.

AB - The spontaneous emission characteristics of InGaN / dilute-As GaNAs interface quantum well for the visible spectral regime were calculated and analyzed, and the findings revealed the strong potential of implementing the dilute-Anion IIINitride alloy as active region for high efficiency visible light emitter.

UR - https://www.scopus.com/pages/publications/85014250407

U2 - 10.1109/IPCon.2016.7831087

DO - 10.1109/IPCon.2016.7831087

M3 - Conference Paper published in a book

AN - SCOPUS:85014250407

T3 - 2016 IEEE Photonics Conference, IPC 2016

SP - 834

EP - 835

BT - 2016 IEEE Photonics Conference, IPC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 2 October 2016 through 6 October 2016

ER -

Dilute-Anion III-nitride: A potential visible light emitter

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