Dilute-As AlNAs alloy for deep-ultraviolet emitter

Chee Keong Tan; Damir Borovac; Wei Sun; Nelson Tansu

doi:10.1038/srep22215

Dilute-As AlNAs alloy for deep-ultraviolet emitter

Chee Keong Tan^*, Damir Borovac, Wei Sun, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

The band structures of dilute-As AlNAs alloys with As composition ranging from 0% up to 12.5% are studied by using First-Principle Density Functional Theory (DFT) calculation. The energy band gap shows remarkable reduction from 6.19 eV to 3.87 eV with small amount of As content in the AlNAs alloy, which covers the deep ultraviolet (UV) spectral regime. A giant bowing parameter of 30.5 eV ± 0.5 eV for AlNAs alloy is obtained. In addition, our analysis shows that the crossover between crystal field split-off (CH) band and heavy hole (HH) bands occurs in the dilute-As AlNAs alloy with As-content of ∼1.5%. This result implies the possibility of dominant transverse electric (TE)-polarized emission by using AlNAs alloy with dilute amount of As-content. Our findings indicate the potential of dilute-As AlNAs alloy as the new active region material for TE-polarized III-Nitride-based deep UV light emitters.

Original language	English
Article number	22215
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep22215
Publication status	Published - 24 Feb 2016
Externally published	Yes

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title = "Dilute-As AlNAs alloy for deep-ultraviolet emitter",

abstract = "The band structures of dilute-As AlNAs alloys with As composition ranging from 0\% up to 12.5\% are studied by using First-Principle Density Functional Theory (DFT) calculation. The energy band gap shows remarkable reduction from 6.19 eV to 3.87 eV with small amount of As content in the AlNAs alloy, which covers the deep ultraviolet (UV) spectral regime. A giant bowing parameter of 30.5 eV ± 0.5 eV for AlNAs alloy is obtained. In addition, our analysis shows that the crossover between crystal field split-off (CH) band and heavy hole (HH) bands occurs in the dilute-As AlNAs alloy with As-content of ∼1.5\%. This result implies the possibility of dominant transverse electric (TE)-polarized emission by using AlNAs alloy with dilute amount of As-content. Our findings indicate the potential of dilute-As AlNAs alloy as the new active region material for TE-polarized III-Nitride-based deep UV light emitters.",

author = "Tan, \{Chee Keong\} and Damir Borovac and Wei Sun and Nelson Tansu",

year = "2016",

month = feb,

day = "24",

doi = "10.1038/srep22215",

language = "English",

volume = "6",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Research",

}

TY - JOUR

T1 - Dilute-As AlNAs alloy for deep-ultraviolet emitter

AU - Tan, Chee Keong

AU - Borovac, Damir

AU - Sun, Wei

AU - Tansu, Nelson

PY - 2016/2/24

Y1 - 2016/2/24

N2 - The band structures of dilute-As AlNAs alloys with As composition ranging from 0% up to 12.5% are studied by using First-Principle Density Functional Theory (DFT) calculation. The energy band gap shows remarkable reduction from 6.19 eV to 3.87 eV with small amount of As content in the AlNAs alloy, which covers the deep ultraviolet (UV) spectral regime. A giant bowing parameter of 30.5 eV ± 0.5 eV for AlNAs alloy is obtained. In addition, our analysis shows that the crossover between crystal field split-off (CH) band and heavy hole (HH) bands occurs in the dilute-As AlNAs alloy with As-content of ∼1.5%. This result implies the possibility of dominant transverse electric (TE)-polarized emission by using AlNAs alloy with dilute amount of As-content. Our findings indicate the potential of dilute-As AlNAs alloy as the new active region material for TE-polarized III-Nitride-based deep UV light emitters.

AB - The band structures of dilute-As AlNAs alloys with As composition ranging from 0% up to 12.5% are studied by using First-Principle Density Functional Theory (DFT) calculation. The energy band gap shows remarkable reduction from 6.19 eV to 3.87 eV with small amount of As content in the AlNAs alloy, which covers the deep ultraviolet (UV) spectral regime. A giant bowing parameter of 30.5 eV ± 0.5 eV for AlNAs alloy is obtained. In addition, our analysis shows that the crossover between crystal field split-off (CH) band and heavy hole (HH) bands occurs in the dilute-As AlNAs alloy with As-content of ∼1.5%. This result implies the possibility of dominant transverse electric (TE)-polarized emission by using AlNAs alloy with dilute amount of As-content. Our findings indicate the potential of dilute-As AlNAs alloy as the new active region material for TE-polarized III-Nitride-based deep UV light emitters.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000370773900001

UR - https://www.scopus.com/pages/publications/84959387187

U2 - 10.1038/srep22215

DO - 10.1038/srep22215

M3 - Journal Article

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 22215

ER -

Dilute-As AlNAs alloy for deep-ultraviolet emitter

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