Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

Piyas Samanta; Tsz Yin Man; Alain Chun Keung Chan; Qingchun Zhang; Chunxiang Zhu; Mansun Chan

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

Piyas Samanta^*
, Tsz Yin Man
, Alain Chun Keung Chan
, Qingchun Zhang
, Chunxiang Zhu
, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

Stress mode (constant current and voltage) dependence of the gate leakage current has been systematically investigated using the tantalum nitride (TaN) gated metal-oxide-silicon (MOS) capacitors at negative bias in direct tunneling (DT) regime. It is shown that constant voltage stress-induced leakage current (SILC) is higher than the constant current SILC at an equal stress time. Based on the electron energy in DT regime, our experimental results also give a better physical insight of the conduction mechanism of SILC in ultrathin silicon dioxide (SiO₂) films.

Original language	English
Title of host publication	2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
Pages	594-595
Number of pages	2
Publication status	Published - 2005
Event	2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States Duration: 17 Apr 2005 → 21 Apr 2005

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
Country/Territory	United States
City	San Jose, CA
Period	17/04/05 → 21/04/05

Cite this

@inproceedings{ed25eb40542a4beb9db88a5af931b585,

title = "Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides",

abstract = "Stress mode (constant current and voltage) dependence of the gate leakage current has been systematically investigated using the tantalum nitride (TaN) gated metal-oxide-silicon (MOS) capacitors at negative bias in direct tunneling (DT) regime. It is shown that constant voltage stress-induced leakage current (SILC) is higher than the constant current SILC at an equal stress time. Based on the electron energy in DT regime, our experimental results also give a better physical insight of the conduction mechanism of SILC in ultrathin silicon dioxide (SiO2) films.",

author = "Piyas Samanta and Man, \{Tsz Yin\} and Chan, \{Alain Chun Keung\} and Qingchun Zhang and Chunxiang Zhu and Mansun Chan",

year = "2005",

language = "English",

isbn = "0780388038",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "594--595",

booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",

note = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual ; Conference date: 17-04-2005 Through 21-04-2005",

}

Samanta, P, Man, TY, Chan, ACK, Zhang, Q, Zhu, C & Chan, M 2005, Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides. in 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. IEEE International Reliability Physics Symposium Proceedings, pp. 594-595, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual, San Jose, CA, United States, 17/04/05.

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides. / Samanta, Piyas; Man, Tsz Yin; Chan, Alain Chun Keung et al.
2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. p. 594-595 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

AU - Samanta, Piyas

AU - Man, Tsz Yin

AU - Chan, Alain Chun Keung

AU - Zhang, Qingchun

AU - Zhu, Chunxiang

AU - Chan, Mansun

PY - 2005

Y1 - 2005

N2 - Stress mode (constant current and voltage) dependence of the gate leakage current has been systematically investigated using the tantalum nitride (TaN) gated metal-oxide-silicon (MOS) capacitors at negative bias in direct tunneling (DT) regime. It is shown that constant voltage stress-induced leakage current (SILC) is higher than the constant current SILC at an equal stress time. Based on the electron energy in DT regime, our experimental results also give a better physical insight of the conduction mechanism of SILC in ultrathin silicon dioxide (SiO2) films.

AB - Stress mode (constant current and voltage) dependence of the gate leakage current has been systematically investigated using the tantalum nitride (TaN) gated metal-oxide-silicon (MOS) capacitors at negative bias in direct tunneling (DT) regime. It is shown that constant voltage stress-induced leakage current (SILC) is higher than the constant current SILC at an equal stress time. Based on the electron energy in DT regime, our experimental results also give a better physical insight of the conduction mechanism of SILC in ultrathin silicon dioxide (SiO2) films.

UR - https://www.scopus.com/pages/publications/28744455436

M3 - Conference Paper published in a book

AN - SCOPUS:28744455436

SN - 0780388038

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 594

EP - 595

BT - 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual

T2 - 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual

Y2 - 17 April 2005 through 21 April 2005

ER -

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

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